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Recent Advances In Electronic And Optoelectronic Devices Based On Two-Dimensional Transition Metal Dichalcogenides, Mingxiao Ye, Dongyan Zhang, Yoke Khin Yap
Recent Advances In Electronic And Optoelectronic Devices Based On Two-Dimensional Transition Metal Dichalcogenides, Mingxiao Ye, Dongyan Zhang, Yoke Khin Yap
Department of Physics Publications
Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive features for use in next-generation electronic and optoelectronic devices. Device applications of TMDCs have gained much research interest, and significant advancement has been recorded. In this review, the overall research advancement in electronic and optoelectronic devices based on TMDCs are summarized and discussed. In particular, we focus on evaluating field effect transistors (FETs), photovoltaic cells, light-emitting diodes (LEDs), photodetectors, lasers, and integrated circuits (ICs) using TMDCs.
Hetero-Junctions Of Boron Nitride And Carbon Nanotubes: Synthesis And Characterization, Yoke Khin Yap
Hetero-Junctions Of Boron Nitride And Carbon Nanotubes: Synthesis And Characterization, Yoke Khin Yap
Department of Physics Publications
Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up …