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Full-Text Articles in Physics
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Physics Faculty Publications
We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to …
Hopping Conduction In Molecular Beam Epitaxial Gaas Grown At Very Low Temperatures, David C. Look, Z-Q. Fang, J. W. Look, J. R. Sizelove
Hopping Conduction In Molecular Beam Epitaxial Gaas Grown At Very Low Temperatures, David C. Look, Z-Q. Fang, J. W. Look, J. R. Sizelove
Physics Faculty Publications
Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial layers grown at very low substrate temperatures, 200 to 400°C. For growth temperatures below 300°C, the conduction is dominated by hopping between arsenic antisite defects of concentrations up to 1020 cm−3. Below measurement temperatures of about 130 K, the hopping conduction can be quenched by strong IR light illumination, because the antisite then becomes metastable. The antisite has a thermal activation energy of , and thus is not identical to the famous EL2. Both nearest‐neighbor and variable‐range hopping mechanisms are considered in …