Open Access. Powered by Scholars. Published by Universities.®
- Discipline
Articles 1 - 3 of 3
Full-Text Articles in Physics
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,20-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, …
Modeling Of Metal-Ferroelectric-Insulator-Semiconductor Structures Based On Langmuir–Blodgett Copolymer Films, Timothy J. Reece, Stephen Ducharme
Modeling Of Metal-Ferroelectric-Insulator-Semiconductor Structures Based On Langmuir–Blodgett Copolymer Films, Timothy J. Reece, Stephen Ducharme
Stephen Ducharme Publications
Among the ferroelectric thin films used in field-effect transistor devices; the ferroelectric copolymer of polyvinylidene fluoride PVDF –CH2–CF2–, with trifluoroethylene TrFE –CHF–CF2–, has distinct advantages, including low dielectric constant, low processing temperature, low cost, and compatibility with organic semiconductors. The operation of a metal-ferroelectric insulatorsemiconductor structure with PVDF-TrFE as the ferroelectric layer was analyzed and optimized by numerical solution of the Miller and McWhorter model. A model device consisting of 20 nm PVDF/TrFE on a 10-nm-thick high-k dielectric buffer exhibits a memory window of 5 V with an operating voltage of 15 V. The operating voltage can be reduced to …
Ferroelectric Polymer Langmuir–Blodgett Films For Nonvolatile Memory Applications, Stephen Ducharme, Timothy J. Reece, Christina M. Othon, R. K. Rannow
Ferroelectric Polymer Langmuir–Blodgett Films For Nonvolatile Memory Applications, Stephen Ducharme, Timothy J. Reece, Christina M. Othon, R. K. Rannow
Department of Physics and Astronomy: Faculty Publications
We review the potential for integrating ferroelectric polymer Langmuir–Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory (NV-FRAM or NV-FeRAM) and data-storage devices. The prototype material is a copolymer consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE), or P(VDF-TrFE 70:30). Recent work with LB films and more conventional solventformed films shows that the VDF copolymers are promising materials for nonvolatile memory applications. The prototype device is themetal–ferroelectric–insulator–semiconductor (MFIS) capacitance memory. Field-effect transistor (FET)-based devices are also discussed. The LB films afford devices with low-voltage operation, but there are two important technical hurdles that must be …