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Full-Text Articles in Physics
Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov
Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov
Kirill Belashchenko Publications
A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching
Perpendicular Magnetic Anisotropy In Bulk And Thin-Film Cumnas For Antiferromagnetic Memory Applications, Ivan A. Zhuravlev, Anil Adhikari, K. D. Belashchenko
Perpendicular Magnetic Anisotropy In Bulk And Thin-Film Cumnas For Antiferromagnetic Memory Applications, Ivan A. Zhuravlev, Anil Adhikari, K. D. Belashchenko
Kirill Belashchenko Publications
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of surface magnetization. It is predicted, based on first-principles calculations, that easy-axis anisotropy can be achieved in bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This effect is attributed to the changing occupation of certain electronic bands near the Fermi level induced by hole doping. The calculated temperature dependence of the magnetic anisotropy does not exhibit any anomalies. Thin CuMnAs(001) …