Physics Commons^™

Ferroelectric Tunnel Junctions With Graphene Electrodes, Haidong Lu, Alexey Lipatov, Sangjin Ryu, D. J. Kim, H. Lee, M. Ye. Zhuravlev, Chang-Beom Eom, Evgeny Y. Tsymbal, Alexander Sinitskii, Alexei Gruverman

Evgeny Tsymbal Publications

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)—structures composed of two electrodes separated by an ultrathin ferroelectric barrier—offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary conditions, which can be controlled by electrode material and/or interface engineering. Here, we demonstrate the use of graphene as electrodes in FTJs that allows control of interface properties for significant enhancement of device performance. Ferroelectric polarization stability and resistive switching are strongly affected by a molecular layer at the graphene/BaTiO₃ interface. …