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Full-Text Articles in Physics
Ferroelectric Polarization Control Of Magnetic Anisotropy In Pbzr0.2ti0.8o3/La0.8sr0.2mno3 Heterostructures, Anil Rajapitamahuni, L. L. Tao, Y. Hao, Jingfeng Song, Xiaoshan Xu, Evgeny Y. Tsymbal, Xia Hong
Ferroelectric Polarization Control Of Magnetic Anisotropy In Pbzr0.2ti0.8o3/La0.8sr0.2mno3 Heterostructures, Anil Rajapitamahuni, L. L. Tao, Y. Hao, Jingfeng Song, Xiaoshan Xu, Evgeny Y. Tsymbal, Xia Hong
Evgeny Tsymbal Publications
The interfacial coupling between the switchable polarization and neighboring magnetic order makes ferroelectric/ferromagnetic composite structures a versatile platform to realize voltage control of magnetic anisotropy. We report the nonvolatile ferroelectric field effect modulation of the magnetocrystalline anisotropy (MCA) in epitaxial PbZr0.2Ti0.8O3 (PZT)/La0.8Sr0.2MnO3 (LSMO) heterostructures grown on (001) SrTiO3 substrates. Planar Hall effect measurements show that the in-plane magnetic anisotropy energy in LSMO is enhanced by about 22% in the hole accumulation state compared to the depletion state, in quantitative agreement with our first-principles density functional theory calculations. Modeling the …
Spin-Polarized Two-Dimensional Electron Gas At Gdtio3/Srtio3 Interfaces: Insight From First-Principles Calculations, J. Betancourt, Tula R. Paudel, Evgeny Y. Tsymbal, J. P. Velev
Spin-Polarized Two-Dimensional Electron Gas At Gdtio3/Srtio3 Interfaces: Insight From First-Principles Calculations, J. Betancourt, Tula R. Paudel, Evgeny Y. Tsymbal, J. P. Velev
Evgeny Tsymbal Publications
Two-dimensional electron gases (2DEGs) at oxide interfaces have been a topic of intensive research due to their high carrier mobility and strong confinement. Additionally, strong correlations in the oxide materials can give rise to new and interesting physics, such as magnetism and metal-insulator transitions at the interface. Using first-principles calculations based on density functional theory, we demonstrate the presence of a highly spin-polarized 2DEG at the interface between the Mott insulator GdTiO3 and a band insulator SrTiO3. The strong correlations in the dopant cause ferromagnetic alignment of the interface Ti atoms and result in a fully spin-polarized …
Long-Range Electronic Reconstruction To A Dxz,Yz-Dominated Fermi Surface Below The Laalo3/Srtio3 Interface, Alexander Paul Petrović, A. Pare, Tula R. Paudel, K. Lee, S. Holmes, Crispin H.W. Barnes, A. David, T. Wu, Evgeny Y. Tsymbal, C. Panagopoulos
Long-Range Electronic Reconstruction To A Dxz,Yz-Dominated Fermi Surface Below The Laalo3/Srtio3 Interface, Alexander Paul Petrović, A. Pare, Tula R. Paudel, K. Lee, S. Holmes, Crispin H.W. Barnes, A. David, T. Wu, Evgeny Y. Tsymbal, C. Panagopoulos
Evgeny Tsymbal Publications
Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial ‘‘depth’’ - remains unclear. Examining LaAlO3/SrTiO3 heterostructures at previously unexplored carrier densities n2D 14 cm-2 , we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential dxz,yz orbital occupancy extending over at least 100 nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO3 emerge simultaneously at higher n2D. …
Polarization-Controlled Ohmic To Schottky Transition At A Metal/Ferroelectric Interface, Xiaohui Liu, Yong Wang, John D. Burton, Evgeny Y. Tsymbal
Polarization-Controlled Ohmic To Schottky Transition At A Metal/Ferroelectric Interface, Xiaohui Liu, Yong Wang, John D. Burton, Evgeny Y. Tsymbal
Evgeny Tsymbal Publications
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n-BTO). The coexistence of a ferroelectric phase and conductivity opens the door to new functionalities that may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling, we explore the effect that the switchable polarization of n-BTO has on the electronic properties of the SrRuO3/n-BTO (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the n-BTO conduction band determines the transport regime across the interface. The …
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Evgeny Tsymbal Publications
Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe–MgO–Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe–MgO–Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small MgO thickness but changes sign and then vanishes for large barrier thickness. First-principles calculations based on density functional theory demonstrate that the presence of neutral O vacancies (F-centers) in the MgO barrier can explain this behavior. Resonant tunneling …