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Full-Text Articles in Physics
Annealing And Deposition Time Effects On The Structural, Optical, And Electrical Properties Of Indium Sulfide Thin Films Produced By Chemical Bath Deposition Method, Emi̇ne Güneri̇, Fatma Göde
Annealing And Deposition Time Effects On The Structural, Optical, And Electrical Properties Of Indium Sulfide Thin Films Produced By Chemical Bath Deposition Method, Emi̇ne Güneri̇, Fatma Göde
Turkish Journal of Physics
Indium sulfide thin films were deposited onto indium-doped tin-oxide substrates with different deposition times (60 h, 63 h, 66 h, and 69 h) at room temperature by using a chemical bath deposition method to obtain new structures for solar cells. The film obtained at 60 h was annealed at 400 $^{\circ}$C for 1 h in nitrogen media. The crystallographic structure of the films was observed via the X-ray diffraction pattern while the size and shape of the grains were characterized by scanning electron microscopy. Moreover, the optical transmission spectra of the films were obtained at room temperature in the wavelength …
Influence Of Composition On The Structure And Optoelectronic Properties Of Pb_Xin_{25-X}Se_{75} Thin Films, Hesham Azmi Elmeleegi, Zeinab El Sayed El Mandouh, Ahmed Abdel Moez
Influence Of Composition On The Structure And Optoelectronic Properties Of Pb_Xin_{25-X}Se_{75} Thin Films, Hesham Azmi Elmeleegi, Zeinab El Sayed El Mandouh, Ahmed Abdel Moez
Turkish Journal of Physics
Pb_xIn_{25-x}Se_{75} thin films with 2 compositions were prepared by thermal evaporation. The surface topography of these films was studied by transmission electron microscope. The optical reflectance and transmittance were studied in order to determine the optical parameters such as optical energy gap, refractive index, extinction coefficient, dielectric loss, and dielectric tangent loss for these films. A single oscillator theory equation was applied for these films in order to determine both dispersion energy and oscillating energy, and the ratio of free carrier concentration/effective mass (N/m*) was determined optically. It was found that change in the composition of these films affects strongly …
An Investigation On Silar Deposited Cu_Xs Thin Films, Aykut Astam, Yunus Akaltun, Muhammet Yildirim
An Investigation On Silar Deposited Cu_Xs Thin Films, Aykut Astam, Yunus Akaltun, Muhammet Yildirim
Turkish Journal of Physics
A copper sulfide thin film was deposited on glass substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric sulfate and sodium sulfide aqueous solutions as precursors. The structural, surface morphological, optical, and electrical properties of the as-deposited film were investigated via X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, and d.c. 2-point probe methods. The film was found to be amorphous, dense, and uniform. Average atomic percentage of Cu:S in the as-deposited film was calculated as 63:37. The band gap energy of copper sulfide thin film was found to be 2.14 eV …
The Composition Dependence Of The Optical Band Gap In Ge Doped Se-Te Glassy Alloy, Mainika Kapoor, Nagesh Thakur
The Composition Dependence Of The Optical Band Gap In Ge Doped Se-Te Glassy Alloy, Mainika Kapoor, Nagesh Thakur
Turkish Journal of Physics
Bulk glasses with the chemical composition (Se_{80}Te_{20})_{100-x}Ge_x (x = 0, 2, 4, 6) have been prepared from high purity constituent elements. Fragments of the bulk glasses are used to deposit thin films by vacuum thermal evaporation and compositional dependence of the optical and physical properties have been studied. It has been found that optical absorption is due to indirect transition and the optical band gap E_g increases with increasing Ge content in Se-Te glassy alloy. The relationship between the E_g and chemical composition is discussed in terms of cohesive energy and co-ordination number.
Effect Of Zinc Incorporation On The Density Of Defect States In A-Se_{85}Te_{15} Glassy Alloy, Shikha Shukla, Santosh Kumar
Effect Of Zinc Incorporation On The Density Of Defect States In A-Se_{85}Te_{15} Glassy Alloy, Shikha Shukla, Santosh Kumar
Turkish Journal of Physics
Present work incorporates the study of d.c. conductivity measurements at high electric fields in vacuum evaporated thin films of Se_{85-x}Te_{15}Zn_x (x = 0, 2, 4, 6 and 10) glassy alloys. Current-Voltage (I-V) characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields (E \sim 10^4 V/cm), non ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, …
Hydrogen Implantation Effects On The Electrical And Optical Properties Of Inse Thin Films, Atef Fayez Qasrawi, Khaled Faisal Ilaiwi, Antonio Polimeni
Hydrogen Implantation Effects On The Electrical And Optical Properties Of Inse Thin Films, Atef Fayez Qasrawi, Khaled Faisal Ilaiwi, Antonio Polimeni
Turkish Journal of Physics
The effects of hydrogen ion implantation on the structural, electrical and optical properties of amorphous InSe thin films have been investigated. X-ray diffraction analysis revealed no change in the structure of the films. An implantation of 7.3 x 10^{18} ions/cm^2 decreased the electrical conductivity by three orders of magnitude at 300 K. Similarly, the conductivity activation energy, which was calculated in the temperature range of 300-420 K, decreased from 210 to 78 meV by H-ion implantation. The optical measurements showed that the direct allowed transitions energy band gap of amorphous InSe films has decreased from 1.50 to 0.97 eV by …
Synthesis Of Barium Oxide Nanorod By Chemical Bath Deposition, Gopalakrishnan Suresh, Putta Narasimhan Nirmala
Synthesis Of Barium Oxide Nanorod By Chemical Bath Deposition, Gopalakrishnan Suresh, Putta Narasimhan Nirmala
Turkish Journal of Physics
We report on the control of nanocrystal sizes in barium oxide nanorods prepared by chemical bath deposition technique. Barium chloride and potassium hydroxide are used as source materials to obtain barium oxide films. Different chemical baths are used to study changes in the structures of the BaO films The effect of hydrazine hydrate on growth of these films has been studied. The results reveal that the additive played a very important role on crystalline size and shape.
Effect Of Cdcl_2/Annealing On The Crystalline Transformation Of Cdte Thin Films Grown By Evaporation At A Low Substrate Temperature, İsmai̇l Polat, Sali̇h Yilmaz, Emi̇n Bacaksiz, Mustafa Altunbaş, Murat Tomaki̇n
Effect Of Cdcl_2/Annealing On The Crystalline Transformation Of Cdte Thin Films Grown By Evaporation At A Low Substrate Temperature, İsmai̇l Polat, Sali̇h Yilmaz, Emi̇n Bacaksiz, Mustafa Altunbaş, Murat Tomaki̇n
Turkish Journal of Physics
The structural and optical properties of CdTe thin films prepared at a low substrate temperature were investigated before and after the CdCl_2/annealing. The crystal structure of CdTe film was cubic with a strong (111) preferential orientation. Annealing at 400 °C without CdCl_2 treatment results in a decrease in the (111) peak intensity while the intensities of the (220), (311) and (331) peaks appeared, indicating that the texture is significantly changed. However, after the CdCl_2/annealing, the film exhibited a hexagonal phase as a dominant structure. The scanning electron microscopy patterns showed that the as-deposited and annealed samples had almost the same …
Structure And Optical Properties Of Cuals_2 Thin Films Prepared Via Chemical Bath Deposition, Tariq Alwan, Mushtak Jabbar
Structure And Optical Properties Of Cuals_2 Thin Films Prepared Via Chemical Bath Deposition, Tariq Alwan, Mushtak Jabbar
Turkish Journal of Physics
CuAlS_2 thin films of thicknesses 118 \pm 5 nm were deposited on glass substrates using chemical bath deposition technique. The details of the preparation method are well described. The method is relatively simple and is easily controlled and sufficient to produce large area and good adherence to the substrate films. Effect of annealing temperature T_a on the structure, and optical properties of CuAlS_2 films were investigated. The structures of the films were studied by X-ray diffraction and FTIR spectrophotometer. The optical properties of the films were ascertained by UV-VIS spectrophotometer (wavelengths ranging between 300 and 900 nm). The optical transmittance …
Studies On Physical Properties And Carrier Conversion Of Sno_2:Nd Thin Films, Jochan Joseph, Varghese Mathew, Jacob Mathew, K. E. Abraham
Studies On Physical Properties And Carrier Conversion Of Sno_2:Nd Thin Films, Jochan Joseph, Varghese Mathew, Jacob Mathew, K. E. Abraham
Turkish Journal of Physics
Neodymium (Nd)-doped SnO_2 transparent conducting oxide thin films were prepared by vapour deposition technique under different deposition parameters: substrate temperature, time and flow rate of vapour deposition, amount of base material, distance between the substrate and spray gun tip, and dopant (Nd) concentration. The structural, optical, electrical and photo-electronic properties of the doped and undoped SnO_2 films were studied. X-ray diffraction studies shows the polycrystalline nature of the films with preferential orientation along the (101), (211) and (301) planes and an average grain size of 100 Å. The optical properties of these films were studied by measuring their optical transmission …
Two-To-Four Coherent Beams Interference Patterns Of Non-Orthogonal Planes, Ali̇ekber Aktağ
Two-To-Four Coherent Beams Interference Patterns Of Non-Orthogonal Planes, Ali̇ekber Aktağ
Turkish Journal of Physics
In this paper, we present an analysis of intensity distribution of interference pattern of two-to-four linearly polarized plane waves at their intersection in a plane surface. A configuration in which the four plane waves intersect at different angles along four non-orthogonal planes is considered. We show that the shape and the intensity distribution of the interference pattern is strong function of the angles of planes, kinds of polarizations, beam incidence angles. A variety of two-dimensional intensity distribution arrays have been formed by two-to-four beams with differing plane angles, angles of beam incidence and beam polarizations, which may potentially be useful …
High Field Conduction In Thin Films Of A-(Ge_{.20}{Se0}_{.80})_{1-X}{Pb}_X Glassy Alloys, Rachna Singh, Santosh Kumar
High Field Conduction In Thin Films Of A-(Ge_{.20}{Se0}_{.80})_{1-X}{Pb}_X Glassy Alloys, Rachna Singh, Santosh Kumar
Turkish Journal of Physics
The present paper reports d.c. conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of (Ge_{.20}Se0_{.80})_{1-x}Pb_x (where x = 0, 0.02, 0.04, 0.06 and 0.10) glassy alloys. Current-Voltage (I-V) Characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields (E \sim 10^4 V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the …
Role Of Sn In The Density Of Defect States In A-Se_{0.75}Te_{0.25} And A-Se_{0.85}Te_{0.15}Thin Films, N. Sharma, Santosh Kumar
Role Of Sn In The Density Of Defect States In A-Se_{0.75}Te_{0.25} And A-Se_{0.85}Te_{0.15}Thin Films, N. Sharma, Santosh Kumar
Turkish Journal of Physics
In this paper we report the effect of Sn incorporation in the density of defect states of two binary Se-Te glassy systems, comparing the properties of a-Se_{0.75}Te_{0.25}, a-Se_{0.85}Te_{0.15} and a-Se_{0.75}Te_{0.15}Sn_{0.10} glassy alloys. Properties of d.c. conductivity at high electric fields in vacuum were examined; and current-voltage (I-V) characteristics have been measured at various fixed temperatures. Ohmic behavior is observed at low electric fields; while at high electric fields (E \sim 10^4 V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the studied glassy materials. Density of defect states …
Opto-Electrical Properties Of Copper-Indium-Selenium Thin Films, S. F. Shaukat, S. A. Khan, Robina Farooq
Opto-Electrical Properties Of Copper-Indium-Selenium Thin Films, S. F. Shaukat, S. A. Khan, Robina Farooq
Turkish Journal of Physics
Copper-Indium-Selenium (CIS) thin films have been characterised using various experimental techniques. These compounds are extensively used in solar cell technology as absorber layers due to their exciting characteristics. Optical transmission measurements on different compositions of CIS films are observed and the absorption coefficient is determined. The Van der Pauw technique is used to divulge the electrical characteristics of these films. The electrical conductivity is found relatively high for the films annealed in vacuum but decreases for films synthesised optimally. It is observed that p-type films have higher conductivity than n-type films. The grain size, composition, structure and the spacing of …
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Preparation And Study Of The Structural, Optical And Electrical Properties Of Cu(In,Ga)Se_2 Thin Films, Athar Javed
Turkish Journal of Physics
Thin film samples of Cu(In,Ga)Se_2 (CIGS) were prepared at room temperature by physical vapor deposition (PVD) technique using resistive heating method onto soda lime glass substrates. Deposition conditions were same for all the samples. The prepared samples were annealed in vacuum at temperature of 200 °C for 5, 10, 15, 30 and 60 minutes and were characterized structurally, optically and electrically. The structural analysis indicate the partial formation of quaternary CIGS compounds for the samples which were annealed in vacuum at 200 °C for 30 and 60 minutes. XRD analysis indicate that there is a continuous growth and improvement in …
Influence Of Thickness On Optical Properties Of A: As_2se_3 Thin Films, Dinesh C. Sati, Rajendra Kumar, Ram Mohan Mehra
Influence Of Thickness On Optical Properties Of A: As_2se_3 Thin Films, Dinesh C. Sati, Rajendra Kumar, Ram Mohan Mehra
Turkish Journal of Physics
This paper reports optical properties of amorphous chalcogenide thin films of As_2Se_3 of different thicknesses 2000-6800 Å. The transmittance and reflectance of thin films were measured in the wavelength range 500-1000 nm. It was found that the optical band gap increases with film thickness. Variation of refractive index n and extinction coefficient k with thickness have been studied to analyze optical efficiency of the As_2Se_3 thin films. The dielectric behavior of the films has also been studied and high frequency dielectric constants \varepsilon_{\infty} has been estimated as a function of thickness of films.
Computational Study For The Structural Change Of The System Cdte_{1-X} S_X Thin Film, Emad Khdayer Al-Shakarchi
Computational Study For The Structural Change Of The System Cdte_{1-X} S_X Thin Film, Emad Khdayer Al-Shakarchi
Turkish Journal of Physics
Polycrystalline thin film of the graded system CdTe_{1-x}S_{x} for x=0,0.1,\ldots,1 are prepared by using thermal evaporation technique deposited on the glass substrate with an average thickness 3000 Å for each individual value of x . XRD technique is used with the aid of a computational program to study the phase change from cubic zinc blend structure to hexagonal wurtzite with an inversion point related to the x-value. It is found that x=0.1 gives us an inversion point in the structural change from cubic to hexagonal phase.
Characterization Of Spray Deposited Bismuth Oxide Thin Films From Non-Aqueous Medium, V.V. Killedar, C.H. Bhosale, C.D. Lokhande
Characterization Of Spray Deposited Bismuth Oxide Thin Films From Non-Aqueous Medium, V.V. Killedar, C.H. Bhosale, C.D. Lokhande
Turkish Journal of Physics
Bismuth oxide thin films have been prepared on amorphous glass substrates from non-aqueous medium using spray pyrolysis method. Characterization of the films was carried out with XRD, optical absorption, dark resistivity and thermoelectric power (TEP) measurements. These studies reveal that films as deposited are polycrystalline; having an optical band gap of 2.6 eV; electrical resistivity is of the order of $10^6$ ohm-cm; and electron carrier concentration and mobility are of the order of $3.8 \times 10^{19}$cm$^3$ and $1.5 \times 10^{-4}$cm$^2$ V$^{-1}$s$^{-1}$, respectively.