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The Combined Effects Of Radio Frequency And Gamma Irradiation On P-Channel Mosfets, Joshua D. Daniel
The Combined Effects Of Radio Frequency And Gamma Irradiation On P-Channel Mosfets, Joshua D. Daniel
Theses and Dissertations
The purpose of this research was to investigate the combined effects of continuous gigahertz radio frequency signals and gamma irradiation on the threshold voltage of metal oxide semiconductor field effect transistors. The combined effects of gigahertz radio frequency waves and gamma irradiation on electronics presents a new challenge in electronic warfare and little is known of the combined effect on threshold voltage damage and recovery. The Fairchild NDS352AP, a commonly used commercial device, was irradiated by a cobalt-60 source under a +5 V bias with and without a radio frequency signal applied to the gate. The threshold voltage was measured …