Open Access. Powered by Scholars. Published by Universities.®
- Discipline
-
- Engineering (44)
- Materials Science and Engineering (26)
- Condensed Matter Physics (23)
- Electrical and Computer Engineering (18)
- Optics (17)
-
- Atomic, Molecular and Optical Physics (11)
- Engineering Physics (10)
- Nanoscience and Nanotechnology (8)
- Astrophysics and Astronomy (6)
- Chemistry (6)
- Semiconductor and Optical Materials (6)
- Electromagnetics and Photonics (5)
- Electronic Devices and Semiconductor Manufacturing (5)
- Chemical Engineering (4)
- Electrical and Electronics (4)
- Engineering Science and Materials (4)
- Other Materials Science and Engineering (4)
- Other Physics (4)
- Biological and Chemical Physics (3)
- Mathematics (3)
- Other Chemical Engineering (3)
- Physical Chemistry (3)
- Plasma and Beam Physics (3)
- Applied Mathematics (2)
- Biochemistry (2)
- Biochemistry, Biophysics, and Structural Biology (2)
- Elementary Particles and Fields and String Theory (2)
- Life Sciences (2)
- Institution
-
- Old Dominion University (18)
- TÜBİTAK (18)
- University at Albany, State University of New York (6)
- Air Force Institute of Technology (5)
- Brigham Young University (5)
-
- Claremont Colleges (5)
- Portland State University (5)
- University of Nebraska - Lincoln (5)
- Selected Works (4)
- University of Kentucky (4)
- Boise State University (3)
- University of Arkansas, Fayetteville (3)
- University of Denver (3)
- University of South Carolina (3)
- University of Texas at El Paso (3)
- Embry-Riddle Aeronautical University (2)
- James Madison University (2)
- Missouri State University (2)
- University of Central Florida (2)
- Washington University in St. Louis (2)
- West Virginia University (2)
- Association of Arab Universities (1)
- California State University, San Bernardino (1)
- Central Washington University (1)
- Chapman University (1)
- City University of New York (CUNY) (1)
- Clemson University (1)
- L.N. Gumilyov Eurasian National University (1)
- Louisiana Tech University (1)
- Macalester College (1)
- Publication Year
- Publication
-
- Turkish Journal of Physics (18)
- Electrical & Computer Engineering Faculty Publications (10)
- Faculty Publications (7)
- Electronic Theses and Dissertations (6)
- Legacy Theses & Dissertations (2009 - 2024) (6)
-
- Physics Faculty Publications (6)
- All HMC Faculty Publications and Research (5)
- Physics Faculty Publications and Presentations (5)
- Theses and Dissertations (5)
- Christian Binek Publications (4)
- Physics and Astronomy Faculty Publications (4)
- Graduate Theses and Dissertations (3)
- Open Access Theses & Dissertations (3)
- Department of Physics and Astronomy - Faculty Scholarship (2)
- Dissertations and Theses (2)
- Electrical & Systems Engineering Publications and Presentations (2)
- MSU Graduate Theses (2)
- Mechanical Engineering - Daytona Beach (2)
- Al-Bahir Journal for Engineering and Pure Sciences (1)
- Al-Qadisiyah Journal of Pure Science (1)
- All Dissertations (1)
- All Faculty Scholarship for the College of the Sciences (1)
- Applied Research Center Publications (1)
- Biology, Chemistry, and Environmental Sciences Faculty Books and Book Chapters (1)
- Chemistry and Biochemistry Faculty Publications (1)
- Chemistry and Biochemistry Faculty Research (1)
- Christian Binek (1)
- College of Sciences Posters (1)
- Conference Papers (1)
- Department of Physics and Astronomy: Faculty Publications (1)
- Publication Type
Articles 31 - 60 of 127
Full-Text Articles in Physics
Magnetic Domain Morphology In [Co(4a)/Pt(7a] Thin Film, Jeremy Metzner
Magnetic Domain Morphology In [Co(4a)/Pt(7a] Thin Film, Jeremy Metzner
Student Works
A collection of results for multi-layered thin films and their magnetic domains.
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …
Optical Signatures Of Spin-Orbit Exciton In Bandwidth-Controlled Sr2Iro4 Epitaxial Films Via High-Concentration Ca And Ba Doping, Maryam Souri, B. H. Kim, John H. Gruenewald, John G. Connell, J. Thompson, J. Nichols, Jsaminka Terzic, B. I. Min, Gang Cao, Joseph W. Brill, Sung S. Ambrose Seo
Optical Signatures Of Spin-Orbit Exciton In Bandwidth-Controlled Sr2Iro4 Epitaxial Films Via High-Concentration Ca And Ba Doping, Maryam Souri, B. H. Kim, John H. Gruenewald, John G. Connell, J. Thompson, J. Nichols, Jsaminka Terzic, B. I. Min, Gang Cao, Joseph W. Brill, Sung S. Ambrose Seo
Physics and Astronomy Faculty Publications
We have investigated the electronic and optical properties of (Sr1−xCax)2IrO4 (x = 0–0.375) and (Sr1−yBay)2IrO4 (y = 0–0.375) epitaxial thin films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the Jeff = 1/2 spin-orbit Mott insulator Sr2IrO4. As the average A-site ionic radius increases from (Sr1−xCax)2IrO4 to (Sr …
Synthesis And Characterization Of The 2-Dimensional Transition Metal Dichalcogenides, Robert Browning
Synthesis And Characterization Of The 2-Dimensional Transition Metal Dichalcogenides, Robert Browning
Dissertations and Theses
In the last 50 years, the semiconductor industry has been scaling the silicon transistor to achieve faster devices, lower power consumption, and improve device performance. Transistor gate dimensions have become so small that short channel effects and gate leakage have become a significant problem. To address these issues, performance enhancement techniques such as strained silicon are used to improve mobility, while new high-k gate dielectric materials replace silicon oxide to reduce gate leakage. At some point the fundamental limit of silicon will be reached and the semiconductor industry will need to find an alternate solution. The advent of graphene led …
Annealing And Deposition Time Effects On The Structural, Optical, And Electrical Properties Of Indium Sulfide Thin Films Produced By Chemical Bath Deposition Method, Emi̇ne Güneri̇, Fatma Göde
Annealing And Deposition Time Effects On The Structural, Optical, And Electrical Properties Of Indium Sulfide Thin Films Produced By Chemical Bath Deposition Method, Emi̇ne Güneri̇, Fatma Göde
Turkish Journal of Physics
Indium sulfide thin films were deposited onto indium-doped tin-oxide substrates with different deposition times (60 h, 63 h, 66 h, and 69 h) at room temperature by using a chemical bath deposition method to obtain new structures for solar cells. The film obtained at 60 h was annealed at 400 $^{\circ}$C for 1 h in nitrogen media. The crystallographic structure of the films was observed via the X-ray diffraction pattern while the size and shape of the grains were characterized by scanning electron microscopy. Moreover, the optical transmission spectra of the films were obtained at room temperature in the wavelength …
Direct Imaging Of Coexisting Ordered And Frustrated Sublattices In Artificial Ferromagnetic Quasicrystals, Barry Farmer, Vinayak Shantaram Bhat, Eric Teipel, J. Unguris, D. J. Keavney, Jeffrey Todd Hastings, Lance E. De Long
Direct Imaging Of Coexisting Ordered And Frustrated Sublattices In Artificial Ferromagnetic Quasicrystals, Barry Farmer, Vinayak Shantaram Bhat, Eric Teipel, J. Unguris, D. J. Keavney, Jeffrey Todd Hastings, Lance E. De Long
Physics and Astronomy Faculty Publications
We have used scanning electron microscopy with polarization analysis and photoemission electron microscopy to image the two-dimensional magnetization of permalloy films patterned into Penrose P2 tilings (P2T). The interplay of exchange interactions in asymmetrically coordinated vertices and short-range dipole interactions among connected film segments stabilize magnetically ordered, spatially distinct sublattices that coexist with frustrated sublattices at room temperature. Numerical simulations that include long-range dipole interactions between sublattices agree with images of as-grown P2T samples and predict a magnetically ordered ground state for a two-dimensional quasicrystal lattice of classical Ising spins.
Interface‐Coupled Bifeo3/Bimno3 Superlattices With Magnetic Transition Temperature Up To 410 K, Eun-Mi Choi, Josée E. Kliebeuker, Thomas Fix, Jie Xiong, Christy J. Kinane, Dario Arena, Sean Langridge, Aiping Chen, Zhenxing Bi, Joon Hwan Lee, Quanix Jia, Mark G. Blamire, Judith L. Macmanus-Driscoll
Interface‐Coupled Bifeo3/Bimno3 Superlattices With Magnetic Transition Temperature Up To 410 K, Eun-Mi Choi, Josée E. Kliebeuker, Thomas Fix, Jie Xiong, Christy J. Kinane, Dario Arena, Sean Langridge, Aiping Chen, Zhenxing Bi, Joon Hwan Lee, Quanix Jia, Mark G. Blamire, Judith L. Macmanus-Driscoll
Physics Faculty Publications
Enhanced magnetic transition temperatures are demonstrated in 50 nm thick (001)‐oriented (BiFeO3)m/(BiMnO3)m (BFO/BMO) superlattices (SL). Highly strained ultra‐short SLs showed a magnetic transition, TC2, up to ≈410 K as a result of ferrimagnetic interaction between BFO/BMO. All SL showed a new ferromagnetic transtion, TC1, of ≈150 K coming from Fe4+‐Fe4+ interaction explained by electron transfer/leakage from Fe3+ to Mn3+.
Identification Of Photocurrents In Topological Insulators, Derek A. Bas, Rodrigo A. Muniz, Sercan Babakiray, David Lederman, J. E. Sipe, Alan D. Bristow
Identification Of Photocurrents In Topological Insulators, Derek A. Bas, Rodrigo A. Muniz, Sercan Babakiray, David Lederman, J. E. Sipe, Alan D. Bristow
Faculty & Staff Scholarship
Optical injection and detection of charge currents is an alternative to conventional transport and photoemission measurements, avoiding the necessity of invasive contact that may disturb the system being examined. This is a particular concern for analyzing the surface states of topological insulators. In this work one- and two-color sources of photocurrents are isolated and examined in epitaxial thin films of Bi2Se3. We demonstrate that optical excitation and terahertz detection simultaneously captures one- and two-color photocurrent contributions, which has not been required for other material systems. A method is devised to extract the two components, and in doing so each can …
Crystallization Engineering As A Route To Epitaxial Strain Control, Andrew R. Akbashev, Aleksandr V. Plokhikh, Dmitri Barbash, Samuel Lofland, Jonathan E. Spanier
Crystallization Engineering As A Route To Epitaxial Strain Control, Andrew R. Akbashev, Aleksandr V. Plokhikh, Dmitri Barbash, Samuel Lofland, Jonathan E. Spanier
Faculty Scholarship for the College of Science & Mathematics
The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO3 and (001)LaAlO3substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO3 results in a coherently strained film, the same films obtained on (001)LaAlO3 …
Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday
Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday
Faculty Publications
We demonstrate improved terahertz (THz) modulation using thermally crystallized germanium telluride (GeTe) thin films. GeTe is a chalcogenide material that exhibits a nonvolatile, amorphous to crystalline phase change at approximately 200 °C, as well as six orders of magnitude decreased electrical resistivity. In this study, amorphous GeTe thin films were sputtered on sapphire substrates and then tested using THz time-domain spectroscopy (THz-TDS). The test samples, heated in-situ while collecting THz-TDS measurements, exhibited a gradual absorbance increase, an abrupt nonvolatile reduction at the transition temperature, followed by another gradual increase in absorbance. The transition temperature was verified by conducting similar thermal …
Engineering The Ground State Of Complex Oxides, Derek Joseph Meyers
Engineering The Ground State Of Complex Oxides, Derek Joseph Meyers
Graduate Theses and Dissertations
Transition metal oxides featuring strong electron-electron interactions have been at the forefront of condensed matter physics research in the past few decades due to the myriad of novel and exciting phases derived from their competing interactions. Beyond their numerous intriguing properties displayed in the bulk they have also shown to be quite susceptible to externally applied perturbation in various forms. The dominant theme of this work is the exploration of three emerging methods for engineering the ground states of these materials to access both their applicability and their deficiencies.
The first of the three methods involves a relatively new set …
Epitaxial Crn Thin Films With High Thermoelectric Figure Of Merit, Eric L. Thies, Daniel A. Hillsberry, Dmitri A. Tenne
Epitaxial Crn Thin Films With High Thermoelectric Figure Of Merit, Eric L. Thies, Daniel A. Hillsberry, Dmitri A. Tenne
Physics Faculty Publications and Presentations
A large enhancement of the thermoelectric figure of merit is reported in single crystalline films of CrN. The strong reduction of the lattice thermal conductivity in the rock-salt phase of this material is shown to be related to intrinsic lattice instabilities, which is similar to the resonant bonding effect proposed for cubic IV-VI compounds. These results demonstrate that useful ideas from classic thermoelectrics and phase change materials can be extended to transition metal nitrides and oxides.
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Jason R. Hattrick-Simpers
High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …
Properties Of Cu(In,Ga,Al)Se² Thin Films Fabricated By Magnetron Sputtering, Talaat A. Hameed, Wei Cao, Bahiga A. Mansour, Inas K. Elzawaway, El-Metwally M. Abdelrazek, Hani E. Elsayed-Ali
Properties Of Cu(In,Ga,Al)Se² Thin Films Fabricated By Magnetron Sputtering, Talaat A. Hameed, Wei Cao, Bahiga A. Mansour, Inas K. Elzawaway, El-Metwally M. Abdelrazek, Hani E. Elsayed-Ali
Applied Research Center Publications
Cu (In,Ga,Al)Se2 (CIGAS) thin films were studied as an alternative absorber layer material to Cu(InxGa1-x)Se2. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ …
Maximum Screening Fields Of Superconducting Multilayer Structures, Alex Gurevich
Maximum Screening Fields Of Superconducting Multilayer Structures, Alex Gurevich
Physics Faculty Publications
It is shown that a multilayer comprised of alternating thin superconducting and insulating layers on a thick substrate can fully screen the applied magnetic field exceeding the superheating fields Hsof both the superconducting layers and the substrate, the maximum Meissner field is achieved at an optimum multilayer thickness. For instance, a dirty layer of thickness ~0.1μm at the Nb surface could increase Hs similar or equal to 240 mT of a clean Nb up to Hs similar or equal to 290 mT. Optimized multilayers of Nb3Sn, NbN, some of the iron pnictides, or alloyed …
Strain Relaxation In Nm-Thick Cu And Cu-Alloy Films Bonded To A Rigid Substrate, Ashley Herrmann
Strain Relaxation In Nm-Thick Cu And Cu-Alloy Films Bonded To A Rigid Substrate, Ashley Herrmann
Legacy Theses & Dissertations (2009 - 2024)
In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the …
Fabrication Of Robust Superconducting Granular Aluminium/Palladium Bilayer Microbolometers With Sub-Nanosecond Response, Thomas E. Wilson
Fabrication Of Robust Superconducting Granular Aluminium/Palladium Bilayer Microbolometers With Sub-Nanosecond Response, Thomas E. Wilson
Thomas E. Wilson
We provide a convenient recipe for fabricating reliable superconducting microbolometers as acoustic phonon detectors with sub-nanosecond response, using imagereversal optical lithography and dc-magnetron sputtering, and our recipe requires no chemical or plasma etching. Our approach solves the traditional problem for granular aluminium bolometers of unreliable (i.e., non-Ohmic) electrical contacts by sequentially sputtering the granular aluminium film and then a palladium capping layer. We use dc calibration data, the method of Danilchenko et al. [1], and direct nanosecond-pulsed photoexcitation to obtain the microbolometer’s characteristic current, thermal conductance, characteristic relaxation time, and heat capacity. We also demonstrate the use of the deconvolution …
Influence Of Composition On The Structure And Optoelectronic Properties Of Pb_Xin_{25-X}Se_{75} Thin Films, Hesham Azmi Elmeleegi, Zeinab El Sayed El Mandouh, Ahmed Abdel Moez
Influence Of Composition On The Structure And Optoelectronic Properties Of Pb_Xin_{25-X}Se_{75} Thin Films, Hesham Azmi Elmeleegi, Zeinab El Sayed El Mandouh, Ahmed Abdel Moez
Turkish Journal of Physics
Pb_xIn_{25-x}Se_{75} thin films with 2 compositions were prepared by thermal evaporation. The surface topography of these films was studied by transmission electron microscope. The optical reflectance and transmittance were studied in order to determine the optical parameters such as optical energy gap, refractive index, extinction coefficient, dielectric loss, and dielectric tangent loss for these films. A single oscillator theory equation was applied for these films in order to determine both dispersion energy and oscillating energy, and the ratio of free carrier concentration/effective mass (N/m*) was determined optically. It was found that change in the composition of these films affects strongly …
An Investigation On Silar Deposited Cu_Xs Thin Films, Aykut Astam, Yunus Akaltun, Muhammet Yildirim
An Investigation On Silar Deposited Cu_Xs Thin Films, Aykut Astam, Yunus Akaltun, Muhammet Yildirim
Turkish Journal of Physics
A copper sulfide thin film was deposited on glass substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric sulfate and sodium sulfide aqueous solutions as precursors. The structural, surface morphological, optical, and electrical properties of the as-deposited film were investigated via X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, and d.c. 2-point probe methods. The film was found to be amorphous, dense, and uniform. Average atomic percentage of Cu:S in the as-deposited film was calculated as 63:37. The band gap energy of copper sulfide thin film was found to be 2.14 eV …
Nanoscale Thermoelectrics: A Study Of The Absolute Seebeck Coefficient Of Thin Films, Sarah J. Mason
Nanoscale Thermoelectrics: A Study Of The Absolute Seebeck Coefficient Of Thin Films, Sarah J. Mason
Electronic Theses and Dissertations
The worlds demand for energy is ever increasing. Likewise, the environmental impact of climate change due generating that energy through combustion of fossil fuels is increasingly alarming. Due to these factors new sources of renewable energies are constantly being sought out. Thermoelectric devices have the ability to generate clean, renewable, energy out of waste heat. However promising that is, their inefficiency severely inhibits applicability and practical use. The usefulness of a thermoelectric material increases with the dimensionless quantity, ZT, where, Z = S2σ/κ, and S, σ, and κ are the Seebeck coefficient and electrical and thermal …
Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Electrical & Computer Engineering Faculty Publications
Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …
Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart
Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67°C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of …
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Adsorption-Controlled Growth Of Bivo4 By Molecular-Beam Epitaxy, D. A. Hillsberry, D. A. Tenne
Physics Faculty Publications and Presentations
Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 ∥ (001)YSZ with [100]BiVO4 ∥ [100]YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV.
The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell
The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell
Electronic Theses and Dissertations
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into …
Origin Of The Low Frequency Radiation Emitted By Radiative Polaritons Excited By Infrared Radiation In Planar La2o3 Films, Anita J. Vincent-Johnson, Yosep Schwab, Harkirat S. Mann, Mathieu Francoeur, James S. Hammonds Jr., Giovanna Scarel
Origin Of The Low Frequency Radiation Emitted By Radiative Polaritons Excited By Infrared Radiation In Planar La2o3 Films, Anita J. Vincent-Johnson, Yosep Schwab, Harkirat S. Mann, Mathieu Francoeur, James S. Hammonds Jr., Giovanna Scarel
Department of Physics and Astronomy - Faculty Scholarship
Upon excitation in thin oxide films by infrared radiation, radiative polaritons are formed with complex angular frequency ω, according to the theory of Kliewer and Fuchs (1966 Phys. Rev. 150 573). We show that radiative polaritons leak radiation with frequency ωi to the space surrounding the oxide film. The frequency ωi is the imaginary part of ω. The effects of the presence of the radiation leaked out at frequency ωi are observed experimentally and numerically in the infrared spectra of La2O3 films on silicon upon excitation by infrared radiation of the 0TH type radiative polariton. The frequency ωi is found …
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Open Access Theses & Dissertations
Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Faculty Publications
High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …
Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit
Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit
Legacy Theses & Dissertations (2009 - 2024)
In traditional semiconductor technology a sputtered copper seed layer is used to improve the adhesion, microstucture, and electromigration characteristics of electrochemically deposited (ECD) copper. The seed layer is deposited on top of a Ta/TaN stack. The Ta layer acts as an adhesion and nucleation layer for the copper seed and the TaN serves as a diffusion barrier for the Cu. As the line widths continue to shrink, scaling each of these layers becomes more difficult. It would be advantageous for the interconnect to be composed of as much copper as possible, transitioning from the traditional liner seed stack to a …
Investigation Of Nbnx Thin Films And Nanoparticles Grown By Pulsed Laser Deposition And Thermal Diffusion, Ashraf Hassan Farha
Investigation Of Nbnx Thin Films And Nanoparticles Grown By Pulsed Laser Deposition And Thermal Diffusion, Ashraf Hassan Farha
Electrical & Computer Engineering Theses & Dissertations
Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (λ = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films.
When the …
Thin Films Of Carbon Nanotubes And Nanotube/Polymer Composites, Anthony D. Willey
Thin Films Of Carbon Nanotubes And Nanotube/Polymer Composites, Anthony D. Willey
Theses and Dissertations
A method is described for ultrasonically spraying thin films of carbon nanotubes that have been suspended in organic solvents. Nanotubes were sonicated in N-Methyl-2-pyrrolidone or N-Cyclohexyl-2-pyrrolidone and then sprayed onto a heated substrate using an ultrasonic spray nozzle. The solvent quickly evaporated, leaving a thin film of randomly oriented nanotubes. Film thickness was controlled by the spray time and ranged between 200-500 nm, with RMS roughness of about 40 nm. Also described is a method for creating thin (300 nm) conductive freestanding nanotube/polymer composite films by infiltrating sprayed nanotube films with polyimide.