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Articles 1 - 17 of 17
Full-Text Articles in Physics
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Faculty Publications
Ferroelectricity in hafnium zirconium oxide (Hf1−xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1−xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1−xZrxO2. …
Hierarchically Structured Photoelectrodes Via Atomic Layer Deposition, Justin Rowan Reed Demoulpied
Hierarchically Structured Photoelectrodes Via Atomic Layer Deposition, Justin Rowan Reed Demoulpied
Graduate Theses and Dissertations
In the search for a sustainable method to meet increasing energy needs, solar energy emerges as an underutilized, plentiful resource. Solar intermittency and requirements for transportation necessitate storing solar energy in the form of chemical bonds via artificial photosynthesis. Photoelectrochemical (PEC) water splitting generates hydrogen fuel from solar energy and water. A semiconducting material that successfully meets the complex requirements for building an industrially scalable PEC device has yet to emerge. This is leading to a reevaluation of materials previously overlooked within PEC research, mainly materials with limitations such as minimal charge carrier mobility and propensity to corrosion under illumination …
Applications Of A Combined Approach Of Kinetic Monte Carlo Simulations And Machine Learning To Model Atomic Layer Deposition (Ald) Of Metal Oxides, Emily Justus
MSU Graduate Theses
Metal-oxides such as ZnO or Al2O3 synthesized through Atomic Layer Deposition (ALD) have been of great research interest as the candidate materials for ultra-thin tunnel barriers. In this study, I have applied a 3D on-lattice Kinetic Monte Carlo (kMC) code developed by Timo Weckman’s group to simulate the growth mechanisms of the tunnel barrier layer and to evaluate the role of various experimentally relevant factors in the ALD processes. I have systematically studied the effect of parameters such as the chamber pressure temperature, pulse, and purge times. The database generated from the kMC simulations was subsequently used …
Review Of Current Reactive Force Field Potentials For Use In Simulating The Atomic Layer Deposition Of Alumina On Aluminum, Devon T. Romine
Review Of Current Reactive Force Field Potentials For Use In Simulating The Atomic Layer Deposition Of Alumina On Aluminum, Devon T. Romine
MSU Graduate Theses
Alumina has recently garnered quite a bit of attention for use as a tunnel barrier in Josephson tunnel junctions. The quality of the metal oxide layer in the Josephson tunnel junction is a key factor in its effectiveness. To optimize the deposition method of alumina, we need a deep understanding of the large-scale surface interactions that cannot be reached using ab initio molecular dynamics. In this study, I have compared two existing reactive force field (ReaxFF) parameters to determine their abilities to model the atomic layer deposition (ALD) of alumina on an aluminum surface. ReaxFF molecular dynamics was chosen because …
Kinetic Monte Carlo Investigations Involving Atomic Layer Deposition Of Metal-Oxide Thinfilms, David Tyler Magness
Kinetic Monte Carlo Investigations Involving Atomic Layer Deposition Of Metal-Oxide Thinfilms, David Tyler Magness
MSU Graduate Theses
Atomic Layer Deposition is a method of manufacturing thin film materials. Metal-oxides such as zinc-oxide and aluminum-oxide are particularly interesting candidates for use in microelectronic devices such as tunnel junction barriers, transistors, Schottky diodes, and more. By adopting a 3D Kinetic Monte Carlo model capable of simulating ZnO deposition, the effect of parameters including deposition temperature, chamber pressure, and composition of the initial substrate at the beginning of deposition can be investigated. This code generates two random numbers: One is used to select a chemical reaction to occur from a list of all possible reactions and the second is used …
Heterostructure Of 2d Materials: Hfs2/Hfo2/Si, Christopher J. Robledo
Heterostructure Of 2d Materials: Hfs2/Hfo2/Si, Christopher J. Robledo
MSU Graduate Theses
Heterostructures have been utilized in electronic devices for over 50 years with the proposal for the first heterostructure transistor in 1957. With the scaling of devices, it is necessary to create new heterostructures that will comply with Moore’s Law, as well as make devices faster and consume less power. Novel 2D materials, such as hafnium disulfide, have shown promise as an active channel layer, while hafnium dioxide is already proven to be a replacement of silicon dioxide for the gate insulating layer. However, fabrication techniques for wide-scale integration of these heterostructures have not yet been achieved. Also, the dielectric properties …
Atomic Layer Deposition Of Zirconium Oxide Thin Film On An Optical Fiber Forcladding Light Strippers, Ali̇ Karatutlu
Atomic Layer Deposition Of Zirconium Oxide Thin Film On An Optical Fiber Forcladding Light Strippers, Ali̇ Karatutlu
Turkish Journal of Physics
Cladding light strippers are essential components in high-power fiber lasers used for removal of unwanted cladding light that can distort the beam quality or even damage the whole fiber laser system. In this study, an Atomic Layer Deposition system was used for the first time to prepare the cladding light stripper devices using a 40 nm thick zirconia layer grown on optical fiber. The thickness of the zirconia coating was confirmed using the Scanning Electron Microscopy (SEM) and the Ellipsometry techniques. The elemental analysis was also performed using the wavelength dispersive X-ray spectroscopy technique. The Raman spectroscopy and XRD data …
Penetration Depth Variation In Atomic Layer Deposition On Multiwalled Carbon Nanotube Forests, David Alan Kane
Penetration Depth Variation In Atomic Layer Deposition On Multiwalled Carbon Nanotube Forests, David Alan Kane
Theses and Dissertations
Atomic Layer Deposition (ALD) of Al2O3 on tall multiwalled carbon nanotube forests shows concentration variation with the depth in the form of discrete steps. While ALD is capable of extremely conformal deposition in high aspect ratio structures, decreasing penetration depth has been observed over multiple thermal ALD cycles on 1.3 mm tall multiwalled carbon nanotube forests. SEM imaging with Energy Dispersive X-ray Spectroscopy elemental analysis shows steps of decreasing intensity corresponding to decreasing concentrations of Al2O3. A study of these steps suggests that they are produced by a combination of diffusion limited delivery of precursors with increasing precursor adsorption site …
Improved Gas Sensing Performance Of Ald Azo 3-D Coated Zno Nanorods, P. Lin, X. Chen, K. Zhang, H. Baumgart
Improved Gas Sensing Performance Of Ald Azo 3-D Coated Zno Nanorods, P. Lin, X. Chen, K. Zhang, H. Baumgart
Electrical & Computer Engineering Faculty Publications
This paper reports an enhancement on the sensing performance of ZnO nanorod ethanol sensors with a new approach by utilizing nested coatings of Aluminum doped ZnO (AZO) thin films by Atomic Layer Deposition (ALD) technology. ZnO nanorods were grown by the hydrothermal method with the ZnO seed layer synthesized on Silicon wafers by ALD. To enhance the sensing performance of ZnO nanorod ethanol sensors, multiple coated AZO thin film 3-D coatings were deposited on the surface of the intrinsic ZnO nanorods by ALD.To investigate the sensing performance of the ZnO nanorods sensor for the detection of ethanol vapor, a gas …
Chemically Stable Artificial Sei For Li-Ion Battery Electrodes, Qinglin Zhang, Lei Han, Jie Pan, Zhi Chen, Yang-Tse Cheng
Chemically Stable Artificial Sei For Li-Ion Battery Electrodes, Qinglin Zhang, Lei Han, Jie Pan, Zhi Chen, Yang-Tse Cheng
Chemical and Materials Engineering Faculty Publications
The importance of coating's chemical stability in lithium-ion batteries has been demonstrated by this study. It is well known that the mechanical properties determine the cycle life, and chemical stability or chemical degradation rate determines the calendar life. In this study, we used HfO2 coatings prepared by atomic layer deposition as an example to show the chemical stability of the coatings for lithium ion battery electrodes.
Synthesis And Characterization Of The 2-Dimensional Transition Metal Dichalcogenides, Robert Browning
Synthesis And Characterization Of The 2-Dimensional Transition Metal Dichalcogenides, Robert Browning
Dissertations and Theses
In the last 50 years, the semiconductor industry has been scaling the silicon transistor to achieve faster devices, lower power consumption, and improve device performance. Transistor gate dimensions have become so small that short channel effects and gate leakage have become a significant problem. To address these issues, performance enhancement techniques such as strained silicon are used to improve mobility, while new high-k gate dielectric materials replace silicon oxide to reduce gate leakage. At some point the fundamental limit of silicon will be reached and the semiconductor industry will need to find an alternate solution. The advent of graphene led …
Self-Assembled Nanocrystalline Zno Thin Film Transistor Performance Optimization For High Speed Applications, Burhan Bayraktaroglu, Kevin Leedy
Self-Assembled Nanocrystalline Zno Thin Film Transistor Performance Optimization For High Speed Applications, Burhan Bayraktaroglu, Kevin Leedy
Turkish Journal of Physics
ZnO nanocrystals grown at relatively low temperatures using various vacuum deposition techniques can yield semiconducting thin films of self-assembled nanocolumns 20-50 nm in diameter. Such films are suitable for the fabrication of high speed and transparent thin film transistors (TFTs). Unlike amorphous TFTs, the performance of ZnO transistors depends both on the crystal quality of nanocrystals and the electrical properties of boundary layers between them. We investigated the use of radio frequency sputtering, atomic layer deposition, and pulsed laser deposition techniques to fabricate self-assembled nanocrystalline thin films and determined the influence of deposition conditions on the performance of transistors. Device …
Control System Of An Atomic Layer Deposition (Ald) Machine, Nitin Vishnu Hegde
Control System Of An Atomic Layer Deposition (Ald) Machine, Nitin Vishnu Hegde
Electrical & Computer Engineering Theses & Dissertations
Atomic Layer Deposition is one of the most efficient deposition processes for obtaining ultrathin films. The deposition by this process happens one atomic layer at a time. ALD is known for its precision and ability to develop quality films with great thickness control. ALD machines simultaneously control DC and AC currents, low pressure operations, temperature control and heating (up to 500'C), precision flow control, precision timing intervals for deposition (milli-second intervals) and constantly monitor temperature. Such a high control comes at a high price. Furthermore, at the university level, the capacity to modify or enhance a machine is critical but …
Synthesis And Optimization Of Vo₂ Thin Films For Phase Transition Applications By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala
Synthesis And Optimization Of Vo₂ Thin Films For Phase Transition Applications By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala
Electrical & Computer Engineering Theses & Dissertations
Among many Vanadium oxides and suboxides, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) or semiconductor-metal transition (SMT) behavior, a reversible change in its electrical and optical properties that occurs due to a phase transition near a temperature of 68°C. Electrically, the resistivity of VO2 can be changed as large as 4-5 orders of magnitude. Optically, the transmittance drops dramatically above the transition temperature in the metallic state where the VO2 film becomes highly reflective in the infrared region. All these properties result in structural phase transformation from a low temperature monoclinic to …
Effects Of Metallic, Semiconducting, And Insulating Substrates On The Coupling Involving Radiative Polaritons In Thin Oxide Films, Anita J. Vincent-Johnson, Kyle A. Vasquez, Giovanna Scarel, James S. Hammonds Jr., Mathieu Francoeur
Effects Of Metallic, Semiconducting, And Insulating Substrates On The Coupling Involving Radiative Polaritons In Thin Oxide Films, Anita J. Vincent-Johnson, Kyle A. Vasquez, Giovanna Scarel, James S. Hammonds Jr., Mathieu Francoeur
Department of Physics and Astronomy - Faculty Scholarship
Through simulations, this work explores the effects of conducting, semiconducting, and insulating substrates on the absorption of infrared radiation by radiative polaritons in oxide layers with thicknesses that range from 30 nm to 9 μm. Using atomic layer deposition, oxide layers can be formed in the nanometer scale. Our results suggest that the chemistry and conductivity of the substrate determine the amount of absorption by radiative polaritons in oxide layers thinner than the skin depth. The effects of the chemistry and conductivity of the substrate are especially effective for oxide films thinner than about 250 nm, which we label as …
Wetting Properties Induced In Nano-Composite Poss-Ma Polymer Films By Atomic Layer Deposited Oxides, Kyle A. Vasquez, Anita J. Vincent-Johnson, W. Chris Hughes, Brian H. Augustine, Kyoungmi Lee, Gregory N. Parsons, Giovanna Scarel
Wetting Properties Induced In Nano-Composite Poss-Ma Polymer Films By Atomic Layer Deposited Oxides, Kyle A. Vasquez, Anita J. Vincent-Johnson, W. Chris Hughes, Brian H. Augustine, Kyoungmi Lee, Gregory N. Parsons, Giovanna Scarel
Department of Physics and Astronomy - Faculty Scholarship
Due to their unique properties, nano-composite polyhedral oligomeric silsequioxane (POSS) copolymer films are attractive for various applications. Here we show that their natural hydrophobic character can become hydrophilic when the films are modified by a thin oxide layer, up to 8 nm thick, prepared using atomic layer deposition. A proper choice of the deposition temperature and thickness of the oxide layer are required to achieve this goal. Unlike other polymeric systems, a marked transition to a hydrophilic state is observed with oxide layers deposited at increasing temperatures up to the glass transition temperature (∼110 °C) of the POSS copolymer film. …
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Electrical & Computer Engineering Theses & Dissertations
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an …