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Full-Text Articles in Physics
Wetting Properties Induced In Nano-Composite Poss-Ma Polymer Films By Atomic Layer Deposited Oxides, Kyle A. Vasquez, Anita J. Vincent-Johnson, W. Chris Hughes, Brian H. Augustine, Kyoungmi Lee, Gregory N. Parsons, Giovanna Scarel
Wetting Properties Induced In Nano-Composite Poss-Ma Polymer Films By Atomic Layer Deposited Oxides, Kyle A. Vasquez, Anita J. Vincent-Johnson, W. Chris Hughes, Brian H. Augustine, Kyoungmi Lee, Gregory N. Parsons, Giovanna Scarel
Department of Physics and Astronomy - Faculty Scholarship
Due to their unique properties, nano-composite polyhedral oligomeric silsequioxane (POSS) copolymer films are attractive for various applications. Here we show that their natural hydrophobic character can become hydrophilic when the films are modified by a thin oxide layer, up to 8 nm thick, prepared using atomic layer deposition. A proper choice of the deposition temperature and thickness of the oxide layer are required to achieve this goal. Unlike other polymeric systems, a marked transition to a hydrophilic state is observed with oxide layers deposited at increasing temperatures up to the glass transition temperature (∼110 °C) of the POSS copolymer film. …
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily
Electrical & Computer Engineering Theses & Dissertations
Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an …