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- A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap. (1)
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Articles 61 - 65 of 65
Full-Text Articles in Physics
Effect Of The Oxygen/Halogen Ratio On The Physical Properties Of Some Sodium-Boro-Vanadate Glasses, Ahmed Gamal El-Din Mostafa
Effect Of The Oxygen/Halogen Ratio On The Physical Properties Of Some Sodium-Boro-Vanadate Glasses, Ahmed Gamal El-Din Mostafa
Turkish Journal of Physics
Four different glass systems of the sodium boro-vanadate type containing halogen ions, were prepared by melting at 1000°C for three hours and annealed at 300°C. These glasses were investigated using dc conductivity, density, molar volume and magnetic susceptibility measurements. It was found that the activation energy shows a decrease as the halogen ions were increased, which was attributed to the increase in the mobility of sodium ions and the gradual formation of some terminal non-bridging halogens, in addition to the electron hopping between the different oxidation states of vanadium. The activation energy values for glasses containing iodine ions was less …
Paramagnetic Defects In \Gamma-Irradiated, Pure And Doped (With As, Cl And Br) Selenium, Ibrahimgizi Salima Mekhtieva, Ibrahimogli Namig Ibragimov, Isaogli Abasat Isaev, Zeinalogli Vasif Zeinalov, Arifogli Eldar Mamedov
Paramagnetic Defects In \Gamma-Irradiated, Pure And Doped (With As, Cl And Br) Selenium, Ibrahimgizi Salima Mekhtieva, Ibrahimogli Namig Ibragimov, Isaogli Abasat Isaev, Zeinalogli Vasif Zeinalov, Arifogli Eldar Mamedov
Turkish Journal of Physics
This paper presents results of an EPR spectrum investigation of \gamma-irradiated (Co^{60} dose 10^{7} Rad) glasses Se, SeCl_{x}, Se_{0.95}As_{0.05}Cl_{x} and Se_{0.95}As_{0.05}Br_{x} (x=0.001--0.1) at 77 K. An analysis of spectra reveals that two types of paramagnetic radiation-induced defects arise (broken bonds localized on Se and As atoms) from the irradiation of such chalcogenide glasses.
Characterization Of The Sno_{2}/P Contact Resistance And Sno_{2} Properties In Operating A-Si:H P-I-N Solar Cells, Ruhi̇ Kaplan, Bengü Kaplan
Characterization Of The Sno_{2}/P Contact Resistance And Sno_{2} Properties In Operating A-Si:H P-I-N Solar Cells, Ruhi̇ Kaplan, Bengü Kaplan
Turkish Journal of Physics
A method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si TCO/p-i-n superstrate devices. It is extremely useful for understanding resistance losses in modulus and diagnosing how plasma processing influences the TCO layers. Analysis of 4-terminal dark J-V measurements as a function of temperature on devices with varying TCO geometry yields the TCO/p contact resistance R_{TCO/p}, its activation energy E_{a} or barrier height, and the TCO sheet resistance R_{SH} in an integrated device structure. The method is applied to devices fabricated on different brands of commercial SnO_{2} substrates with different p-layers. Important new results are …
The Temperature Dependence Of The Electronic Structure Of Si \Delta-Doped Gaas, Emi̇ne Öztürk
The Temperature Dependence Of The Electronic Structure Of Si \Delta-Doped Gaas, Emi̇ne Öztürk
Turkish Journal of Physics
We investigated theoretically the change of electronic properties of Si \delta-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.
Properties Of Cold And Hot Polarized Nuclear Matter With Realistic Nucleon Nucleon Interaction, S. A. Moharram
Properties Of Cold And Hot Polarized Nuclear Matter With Realistic Nucleon Nucleon Interaction, S. A. Moharram
Turkish Journal of Physics
The Thomas-Fermi (TF) model is used to calculate the equation of state ofthermal polarized nuclear-matter (NM) within a nonrelativistic Hartree-Fock (HF) scheme. The potential employed is a new realistic version of the density-dependent M3Y effective nucleon-nucleon (NN) interaction where the Yukawa strengths are based on the G-matrix of the Paris interaction. To study the basic properties of asymmetric nuclear matter, this potential is generalized by introducing spin and spin-isospin components into the original M3Y effective NN interaction. The resulting equation of state (EOS) is soft. The results obtained are in reasonable agreement with previous theoretical estimates.