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- Thermoluminescence (2)
- A-Si:H (1)
- A-Si:H p-i-n solar cells. (1)
- A. Dark conductivity; B. Photoconductivity; Rf power density; D. Activation energy; E.Hydrogenated amorphous silicon. (1)
- A. High temperature superconductors; B. Hot pressing; C. YBCO; D. I-V; E. AC susceptibility. (1)
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- A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap. (1)
- Acetylene (1)
- Amorphous (a-) Si:H p-i-n solar cells (1)
- Angular Correlation (1)
- Back reflectors (1)
- Boundary Element Method (1)
- CPM (1)
- Charge-exchange (1)
- Chemical synthesis (1)
- Composite materials (1)
- Coriolis force. (1)
- Coronal mass ejections (1)
- Coulomb system (1)
- Critical current density (1)
- Cross section. (1)
- Decay width (1)
- Defect structure (1)
- Deformation parameter (1)
- Dielectric constant (1)
- Dielectrics (1)
- Dispersion analysis (1)
- Distribution of annealing activation energies. (1)
- Effects of nonstoichiometry (1)
- Electromagnetic transitions. (1)
- Electron Scattering. (1)
Articles 31 - 60 of 64
Full-Text Articles in Physics
Study Of The Effectiveness Of Various Solar Wind Parameters In The Development Of Geomagnetic Storms During Interplanetary Events, -- Badruddin
Turkish Journal of Physics
We have selected some interplanetary events responsible for geomagnetic disturbances of varying magnitude, fairly different from one another. We then tried to find the heliospheric structure (e.g. shock/sheath and/or CME/magnetic cloud) responsible for individual disturbances. We have discussed and inter-compared these structures in their plasma and field parameters as well as in their geomagnetic effects. As a parameter for geomagnetic disturbance we have chosen index Dst, to compare it with variations in field and plasma to heliospheric response structures. We considered parameters such as total field strength, its north-south component, solar wind density, temperature and velocity. In addition, we have …
The Effects Of Nonstoichiometry In High - T_C Superconducting Properties Of Yba_2cu_{3 + X}O_{7 - \Delta}, Beniah Ndudim Onwuagba
The Effects Of Nonstoichiometry In High - T_C Superconducting Properties Of Yba_2cu_{3 + X}O_{7 - \Delta}, Beniah Ndudim Onwuagba
Turkish Journal of Physics
Polycrystalline samples of high T_c superconductor YBa_2Cu_{3 + x}O_{7 - \delta} with 0 \leqslant x \leqslant 0.5 were grown. The effects of nonstoichiometry on the resistance slope above transition temperature T_c and X-ray diffraction patterns for these samples were investigated. In the diffraction patterns obtained, apart from some new features in the peaks, these polycrystalline samples show predominantly 123 phase.
Some Characteristic Properties, Vithal Bhivaba Pujari, V. B. Gaikwad, E. U. Masumdar, P. D. More, L. P. Deshmukh
Some Characteristic Properties, Vithal Bhivaba Pujari, V. B. Gaikwad, E. U. Masumdar, P. D. More, L. P. Deshmukh
Turkish Journal of Physics
This paper presents some information regarding (Cd, Hg) Se materials synthesized by a simple chemical growth process and the structural, optical and electrical transport properties. The growth of these films depends on various preparative parameters and deposition conditions such as concentration of the starting materials, pH, temperature, time, speed of mechanical churning, etc., and the reaction kinetics suggests that the films grow into two different phases: one, initialy an almost linear phase; and second, a saturation phase. The deposits were analysed chemically and by an EDS techniques. It has been seen that more than 70% of the materials taken in …
Mathematical Modeling Of Plasmachemical Processes, Meli̇k-Aslanova Tamilla
Mathematical Modeling Of Plasmachemical Processes, Meli̇k-Aslanova Tamilla
Turkish Journal of Physics
In this research, we studied the kinetics of plasmachemical processes in quasiequilibrium and nonequilibrium conditions. The example of methane conversion into acetylene showed that the most efficient plasmachemical process may be achieved under nonequilibrium conditions, especially, when the reaction was stimulated by vibrational excitation of molecules.
Paramagnetic Defects In \Gamma-Irradiated, Pure And Doped (With As, Cl And Br) Selenium, Ibrahimgizi Salima Mekhtieva, Ibrahimogli Namig Ibragimov, Isaogli Abasat Isaev, Zeinalogli Vasif Zeinalov, Arifogli Eldar Mamedov
Paramagnetic Defects In \Gamma-Irradiated, Pure And Doped (With As, Cl And Br) Selenium, Ibrahimgizi Salima Mekhtieva, Ibrahimogli Namig Ibragimov, Isaogli Abasat Isaev, Zeinalogli Vasif Zeinalov, Arifogli Eldar Mamedov
Turkish Journal of Physics
This paper presents results of an EPR spectrum investigation of \gamma-irradiated (Co^{60} dose 10^{7} Rad) glasses Se, SeCl_{x}, Se_{0.95}As_{0.05}Cl_{x} and Se_{0.95}As_{0.05}Br_{x} (x=0.001--0.1) at 77 K. An analysis of spectra reveals that two types of paramagnetic radiation-induced defects arise (broken bonds localized on Se and As atoms) from the irradiation of such chalcogenide glasses.
Monitoring The Effect Of Recrystallization And Quenching In Almg_{X} Alloy By Pat, A. Ashour, Nour Zaki El-Said, Emad A. Badawi
Monitoring The Effect Of Recrystallization And Quenching In Almg_{X} Alloy By Pat, A. Ashour, Nour Zaki El-Said, Emad A. Badawi
Turkish Journal of Physics
Positron annihilation technique (PAT) lifetime measurements have been carried out on AlMg_{x} samples (x = 0.23, 0.85, 1.27 and 1.4 at %) with point defects and dislocations introduced by plastic deformation at room temperature. Clustering of vacancies was observed by quenching using PAT. The samples were annealed at 573 K for 12 hours to homogenize and divided into two sets. The first set of AlMg_{x} (x = 0.23, 0.85 and 1.4 at %) was deformed to 10, 25 and 35% thickness reduction. Isochronal annealing was studied in the range of 300-550 K. In the second set of measurements, AlMg_{x} (x …
Characterization Of The Sno_{2}/P Contact Resistance And Sno_{2} Properties In Operating A-Si:H P-I-N Solar Cells, Ruhi̇ Kaplan, Bengü Kaplan
Characterization Of The Sno_{2}/P Contact Resistance And Sno_{2} Properties In Operating A-Si:H P-I-N Solar Cells, Ruhi̇ Kaplan, Bengü Kaplan
Turkish Journal of Physics
A method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si TCO/p-i-n superstrate devices. It is extremely useful for understanding resistance losses in modulus and diagnosing how plasma processing influences the TCO layers. Analysis of 4-terminal dark J-V measurements as a function of temperature on devices with varying TCO geometry yields the TCO/p contact resistance R_{TCO/p}, its activation energy E_{a} or barrier height, and the TCO sheet resistance R_{SH} in an integrated device structure. The method is applied to devices fabricated on different brands of commercial SnO_{2} substrates with different p-layers. Important new results are …
Defect Structure Of Glow Peak 1 In Lif:Mg,Ti (Tld-100), A. Necmeddi̇n Yazici
Defect Structure Of Glow Peak 1 In Lif:Mg,Ti (Tld-100), A. Necmeddi̇n Yazici
Turkish Journal of Physics
The possible defect structure of peak 1 of LiF:Mg,Ti (TLD-100) was studied in the present work after different pre-irradiation heat treatments between 80°C and 150°C using the computer glow curve deconvolution (CGCD) method. It was shown that the defect structure of peak 1 is based on colloid centers, Ti^{+4}-3O_{2}^{-}-mixed centers and U_{1}-centers.
The Sensitivity Of C\Rightarrow U \Gamma Decay In The Gluino-Axion Model, Müge Boz
The Sensitivity Of C\Rightarrow U \Gamma Decay In The Gluino-Axion Model, Müge Boz
Turkish Journal of Physics
The sensitivity of c\rightarrow u \gamma decay in the recently proposed gluino-axion model is analyzed for a light sbottom in a restricted parameter space. The decay rate enhances up to 3\%$ with respect to the SM result in a moderate range of \tan\beta values.
Stimulated Polarization In \Bf Linbo_{3} And \Bf Ba_{2}Nanb_{5}O_{15} Crystals, Süleyman Çabuk, Amirullah Mamedov
Stimulated Polarization In \Bf Linbo_{3} And \Bf Ba_{2}Nanb_{5}O_{15} Crystals, Süleyman Çabuk, Amirullah Mamedov
Turkish Journal of Physics
Thermally Stimulated Conductivity (TSC) and thermoelectret state in LiNbO_{3} and Ba_{2}NaNb_{5}O_{15} were measured as a function of temperature and time in dark and under UV excitation at liquid nitrogen temperature. Effect of polarization and the other external influences on thermoelectret were investigated. The thermal activation energy levels of traps were determined from TSC measurements as well as parameters (electric field, temperature, etc.) which are necessary for characterizing thermoelectrets were obtained.
Effect Of Rf Power On The Electrical Properties Of Glow-Discharge A-Si:H, Hüseyi̇n Tolunay
Effect Of Rf Power On The Electrical Properties Of Glow-Discharge A-Si:H, Hüseyi̇n Tolunay
Turkish Journal of Physics
Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.
Near Bandedge Optical Absorption Processes In Semi Insulating And N-Type Gaas, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen, Seydi̇ Doğan, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim
Near Bandedge Optical Absorption Processes In Semi Insulating And N-Type Gaas, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen, Seydi̇ Doğan, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim
Turkish Journal of Physics
Near bandedge optical absorption processes in semi-insulating (SI) GaAs and Te-doped n-type GaAs crystals were investigated in the temperature range 10--300 K. We observed absorption peaks whose maximum energies E_{m}, ranging from 1.498 to 1.485 eV decrease as the temperature increases from 10 K to 100 K. The peaks for both SI and n-type GaAs disappeared above 100 K. Extrapolating the graphs of E$_{g}-E_{m} versus temperature, we observed that near bandedge absorption is overlapped by the conduction band at about 220 K and 260 K for n-type and SI samples, respectively. Furthermore, we demonstrated that the absorption in the region …
Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü
Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü
Turkish Journal of Physics
Constant Photocurrent Method (CPM) and steady state photoconductivity measurements are used to investigate the creation of light-induced metastable defects in a-Si:H at room temperature and their annealing. Light-induced metastable defect concentration N$_{d}$ varies with exposure time t_{e}as t_{e}^{r} with r=0.34\ pm 0.02, as expected from the recombination induced weak bond breaking model [1]. The validity of a stretched exponential model is also studied [2]. From the annealing experiments, the distribution of thermal annealing activation energies is calculated following the method proposed by Hata and Wagner [3]. Defects created at room temperature show a narrow distribution of annealing activation energies peaking …
The Contributions Of Anomalous Magnetic Moment To Relativistic Landau Orbits, Ali̇ Havare, Nuri̇ Ünal
The Contributions Of Anomalous Magnetic Moment To Relativistic Landau Orbits, Ali̇ Havare, Nuri̇ Ünal
Turkish Journal of Physics
In this work, the contributions of anomalous magnetic moment to relativistic Landau orbits are calculated by the method of self-field quantum electrodynamics. In addition to contributions from positive energy states new terms from negative energy states that have not been taken into account before are now also included. Contributions from these terms are found to be in the same order as positive terms.
The Determination Of Thermal Annealing Effect On A-Si:H Films Coated On Glass And On Single Crystalline Of Silicon, Necmi̇ Seri̇n, Tülay Seri̇n, Ali̇ Riza Özdemi̇r, Bora Alkan, Çeli̇k Tarimci, Basri̇ Ünal
The Determination Of Thermal Annealing Effect On A-Si:H Films Coated On Glass And On Single Crystalline Of Silicon, Necmi̇ Seri̇n, Tülay Seri̇n, Ali̇ Riza Özdemi̇r, Bora Alkan, Çeli̇k Tarimci, Basri̇ Ünal
Turkish Journal of Physics
The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250^oC, 23-200^oC and 600-1050^oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm^{-1} and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.
Preparation And Anisotropic Elastic Property Of Bi-Sr-Ca-Cu-O Whiskers, Khaliq A. Chaudhary, M. Arshad Choudhry
Preparation And Anisotropic Elastic Property Of Bi-Sr-Ca-Cu-O Whiskers, Khaliq A. Chaudhary, M. Arshad Choudhry
Turkish Journal of Physics
Flexible and superconducting Bi-Sr-Ca-Cu-O whiskers have been prepared by sintering the melt-quenched glassy powder at 830^oC in oxygen atmosphere. X-ray diffraction and a.c. susceptibility measurements reveal that the whiskers belong to 2212 phase with T_{c} = 79k. The whiskers possess high strength and flexibility along c-axis but were found to be weak and brittle when bent normal to the c-axis. The anisotropic micromechanical elastic property of the whiskers have been demonstrated under a low power optical microscope.
Filamentation Of Light Emission In An Infrared-Visible Image Converter With A Semiconductor Photodetector, Hi̇lal Yücel Kurt, H. S. Kiymaz, B. G. Salamov, K. Çolakoğlu
Filamentation Of Light Emission In An Infrared-Visible Image Converter With A Semiconductor Photodetector, Hi̇lal Yücel Kurt, H. S. Kiymaz, B. G. Salamov, K. Çolakoğlu
Turkish Journal of Physics
This work studies the light emission patterns associated with the spatial modulation of the transversal distribution of the current density in a converter cell with a GaAs semiconductor cathode. Such light emission exhibits spatial structures of current filaments depending on the feeding voltage, illumination intensity, gas pressure and the surface treatment of the electrodes. When the current is increased above the stable limit, breakdown or small current filamentations begin. However, n-GaAs exhibits an S-shaped current-density-field relation due to impact ionization of carriers from shallow donors into the conduction band under high electric fields. The assessment of the filament formation is …
Temperature Dependence Of Galvanomagnetic Properties For Lightly Doped N-Type Si, Aytunç Ateş, Beki̇r Gürbulak, Seydi̇ Doğan, Muhammet Yildirim, Sebahatti̇n Tüzemen
Temperature Dependence Of Galvanomagnetic Properties For Lightly Doped N-Type Si, Aytunç Ateş, Beki̇r Gürbulak, Seydi̇ Doğan, Muhammet Yildirim, Sebahatti̇n Tüzemen
Turkish Journal of Physics
The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {\Omega } cm at room temperature is studied in the temperature range of 210-320 K. The variation of transverse magnetoresistance as a function of temperature is similar to the longitudinal magnetoresistance variation in < 001 > and < 1\bar {1}0 > n-Si the samples. It is observed that, in < 001 > sample, the transverse and longitudinal magnetoresistance variation is greater than that in the < 1\bar {1}0 > sample. In both samples, the temperature dependences of magnetoresistance is in accordance to double space anisotropy parameters. In both samples, the transverse and longitudinal magnetoresistance coefficents increase with increasing …
A Method For Identifying Gluon Jets With High Purity In 3-Jet Hadronic Z Decays, Ayda Beddall
A Method For Identifying Gluon Jets With High Purity In 3-Jet Hadronic Z Decays, Ayda Beddall
Turkish Journal of Physics
A method for identifying gluon jets with very high purity is presented and the performance evaluated. Quark and gluon jets from Monte Carlo simulated Hadronic Z decays are identified by energy ordered jets and applying heavy flavour tagging. It is shown that quark and gluon jets can be identified with a purity of about 98%.
Dependence Of Neutron-Proton Entity Transfer On Superfluid Parameters, Hüseyi̇n Ayteki̇n
Dependence Of Neutron-Proton Entity Transfer On Superfluid Parameters, Hüseyi̇n Ayteki̇n
Turkish Journal of Physics
In this study the nuclear matrix elements of neutron-proton (n-p) entity transfer of even-even nuclei are investigated in the Tamm-Dancoff Approximation (TDA). These matrix elements are used for n-p entity stripping from even-even nuclei and n-p entity absorbing of even-even nuclei. It is shown that the matrix element of 0^{+} \to 0^{+} transition between {\left {Z,N} \right\rangle} and {\left {Z - 2,N - 2} \right\rangle} even-even nuclei via the 1^{+} states of {\left {Z - 1,N - 1} \right\rangle} intermediate nuclei depends only on the superfluid parameters.
The Investigation Of The E2/M1 Multipole Mixing Ratios And Deformation Parameters Of Electromagnetic Transitions In Decay Of ^{156}Gd, Mehmet Baylan, İhsan Uluer
The Investigation Of The E2/M1 Multipole Mixing Ratios And Deformation Parameters Of Electromagnetic Transitions In Decay Of ^{156}Gd, Mehmet Baylan, İhsan Uluer
Turkish Journal of Physics
The extended Rotation -- Vibration Model (RTV) containing different deformations for protons and neutrons is applied to ^{156}Gd nucleus. Using the Rotation-Vibration Model approach multipole mixing ratios \delta (E2/M1), deformation parameter \beta_{o} , g_{R} factors, and quadrupole moments q_{2} + and q_{o} were calculated.
Relations For Different Resonators Of Nd:Glass And Nd:Yag Lasers, Erol Taşal, M. Selami̇ Kiliçkaya
Relations For Different Resonators Of Nd:Glass And Nd:Yag Lasers, Erol Taşal, M. Selami̇ Kiliçkaya
Turkish Journal of Physics
Simple relations in terms of effective g parameters are given for linear resonators that contain laser rods with curved endfaces and for symmetrical and asymmetric ring resonators of Nd:Glass and Nd:YAG lasers. The equivalence relationships of thick and thin lenses have been applied.
Effect Of The Zn Concentration On The Characteristic Parameters Of Zn_{X}Cd_{1 - X}S Thin Films Developed By Spraying Pyrolysis Method Under The Nitrogen Atmosphere, Meti̇n Bedi̇r, Refi̇k Kayali, Mustafa Öztaş
Effect Of The Zn Concentration On The Characteristic Parameters Of Zn_{X}Cd_{1 - X}S Thin Films Developed By Spraying Pyrolysis Method Under The Nitrogen Atmosphere, Meti̇n Bedi̇r, Refi̇k Kayali, Mustafa Öztaş
Turkish Journal of Physics
The electronic and optical properties of Zn_{x}Cd _{(1- x)}S thin films (0.0 \le x \le 0.7) fabricated using the chemical spray method have been investigated in nitrogen atmosphere. The films are deposited on glass substrates at 420^oC substrate temperature. The related optical data are recorded in the wavelength range 200-700 nm. In addition, the absorption coefficient is determined and correlated with the photon energy in order to estimate the direct transition energy bandgap. The crystallite size and degree of preferential orientation were found to decrease with the increase of x and to improve upon annealing in vacuum at \cong 600^oC. …
Urbach's Rule And Optical Properties For Tlgas_{2}, Aytunç Ateş, Beki̇r Gürbulak, Muhammet Yildirim, Seydi̇ Doğan, Songül Duman, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen
Urbach's Rule And Optical Properties For Tlgas_{2}, Aytunç Ateş, Beki̇r Gürbulak, Muhammet Yildirim, Seydi̇ Doğan, Songül Duman, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen
Turkish Journal of Physics
Absorption measurements were carried out on TlGaS_{2} sample in the temperature range between 10 and 320 K in 10 K steps. There is an abrupt change in the Urbach energy at 180 K and 280 K and steepness parameter at 120 K and 220 K .Obtained from the changing of the Urbach energy, these may be phase transition temperatures. The phonon energies calculated for TlGaS_{2} is 19.7 \pm 5 meV.
On Numerical Simulations Of Composite Dielectrics In Thermally Stimulated Conditions, Eni̇s Tuncer, Stanislaw M. Gubanski
On Numerical Simulations Of Composite Dielectrics In Thermally Stimulated Conditions, Eni̇s Tuncer, Stanislaw M. Gubanski
Turkish Journal of Physics
A binary composite system with particulated inclusions was considered. First, thermally stimulated depolarization ({\sc tsd}) currents of the system were simulated by altering different parameters of the {\sc tsd} current equation, {\em i.e.}, intrinsic dielectric properties of constituents, conductivity of inclusions, heating rate and activation energy of inclusion conductivity and shape of inclusions. Two different methods of finding the activation energy of {\sc tsd} processes from the simulated {\sc tsd} currents were discussed. Second, we have included the Monte Carlo technique by assuming that the shape factor of inclusions were distributed. These simulations have shown that if the inclusions were …
The B --> S G G Decay In The General Two Higgs Doublet Model, E. O. İltan
The B --> S G G Decay In The General Two Higgs Doublet Model, E. O. İltan
Turkish Journal of Physics
We study the decay width of the inclusive process b --> s g g in the two Higgs doublet model with three-level flavor changing neutral currents (model III). We analyse the dependencies of the differential decay width to the s- quark energy E_s and model III parameters, charged Higgs mass m_H_{^{±}} and Yukawa coupling \bar{\xi}_{N,bb}^D. We observe that there exist a considerable enhancement in the decay width for the relevant process. This enhancement can be reduced by choosing C_7^{eff} as negative or increasing the lower bound of m_H_{^{±}} to the large values. This is an interesting result which gives an …
Radiation Transfer For Exponential C(X), Fatma Erdoğan
Radiation Transfer For Exponential C(X), Fatma Erdoğan
Turkish Journal of Physics
The emergent flux for radiation transfer in inhomogeneous half-space for exponential c(x) = 1 + ke^{-mx}/1 + be^{-mx} is obtained by using Modified-Eddington method, where m, b, k are constants. As a result of this work, angular flux is obtained in terms of Jacobi polynomials.
Radial And Nonradial Oscillations Of 63 Her (Hd155514 = Hr6391), Ri̇kkat Ci̇velek, Ni̇lgün Kiziloğlu, Hali̇l Kirbiyik
Radial And Nonradial Oscillations Of 63 Her (Hd155514 = Hr6391), Ri̇kkat Ci̇velek, Ni̇lgün Kiziloğlu, Hali̇l Kirbiyik
Turkish Journal of Physics
An attempt has been made toward explaining the observed frequencies in 63 Her. A sequence of evolutionary models have been calculated up to a point where stellar parameters match the observed luminosity and effective temperature of 63 Her. Radial and nonradial oscillations frequencies were obtained for a series of masses 1.85, 1.90 and 1.95 M_\odot and eigth models which represent best the pulsations of 63 Her are given in this paper. Calculations are restricted to low harmonic degrees ( l= 0,1,2,3 ). Six of the eigth observed frequencies quoted in literature were obtained. These we obtained for the model of …
Tsl-Epr Correlation Study Of Lapo_4 : Ce, Tb, B. S. Chakrabarty, K. V. R. Murthy, T. R. Joshi
Tsl-Epr Correlation Study Of Lapo_4 : Ce, Tb, B. S. Chakrabarty, K. V. R. Murthy, T. R. Joshi
Turkish Journal of Physics
Gamma irradiated TSL glow curves of laboratory made phosphor samples of LaPO_{4}:Ce, Tb exhibited one intense peak around 408 K and two smaller peaks around 508 K and 613 K. The spectrum of the first glow peak gives spectral peaks around 480 nm and 540 nm, which can be attributed to the thermal destruction of F^{++} centres and PO_4^{2-} radicals. The luminescense centre has been thought to be Cerium and Terbium ions. The glow peak around 413 K for UV irradiated samples has been attributed to aggregates of dopant ions. The photoluminescence study of the samples exhibited one intense peak …
The Electron-Photon Coincidence Method And Its Application To Excitation Of The 2p State Of Atomic Hydrogen, Hüseyi̇n Ali̇ Yalim, Albert Crowe
The Electron-Photon Coincidence Method And Its Application To Excitation Of The 2p State Of Atomic Hydrogen, Hüseyi̇n Ali̇ Yalim, Albert Crowe
Turkish Journal of Physics
Early measurements of atomic excitation by electron scattering observed either the scattered electron or decay photon. An excited state can not be completely defined by such experiments due to loss of information. Therefore a new method was developed in the early 70's called the correlation method. The new correlation method involves the detection of both the scattered electron and photon arising from the same collision using coincidence techniques. This method enables a full description of an excited state. In this paper, we give a discussion of to the method and its application to excitation of the 2p state of atomic …