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Use Of An Epitaxial Baf2 Buffer Layer On Silicon To Control W03 Thin Film Growth, Luke D. Doucette
Use Of An Epitaxial Baf2 Buffer Layer On Silicon To Control W03 Thin Film Growth, Luke D. Doucette
Electronic Theses and Dissertations
The electronic and mechanical properties of tungsten trioxide (W03) thin films have been successfully utilized in both surface acoustic wave and chemiresistive microsensor devices for the detection of certain gas-phase species. A critical material aspect that can affect microsensor performance is the type and degree of crystallization within the sensing film. However, the inclusion of this added dimension into a thin film limits the number of viable substrates for which heteroepitaxy may be realized. For W03, this constraint has restricted its usage as a sensing material to being primarily coupled with sapphire substrates. Not only does sapphire promote structured film …