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Articles 1 - 3 of 3
Full-Text Articles in Physics
In-Situ X-Ray-Absorption Spectroscopy Study Of Hydrogen Absorption By Nickel-Magnesium Thin Films, B. Farangis, Ponnusamy Nachimuthu, T. J. Richardson, J. L. Slack, Rupert C. Perera, Eric M. Gullikson, Dennis W. Lindle, M. Rubin
In-Situ X-Ray-Absorption Spectroscopy Study Of Hydrogen Absorption By Nickel-Magnesium Thin Films, B. Farangis, Ponnusamy Nachimuthu, T. J. Richardson, J. L. Slack, Rupert C. Perera, Eric M. Gullikson, Dennis W. Lindle, M. Rubin
Chemistry and Biochemistry Faculty Research
Structural and electronic properties of co-sputtered Ni-Mg thin films with varying Ni to Mg ratio were studied by in-situ x-ray absorption spectroscopy in the Ni L-edge and Mg K-edge regions. Co-deposition of the metals led to increased disorder and decreased coordination around Ni and Mg compared to pure metal films. Exposure of the metallic films to hydrogen resulted in formation of hydrides and increased disorder. The presence of hydrogen as a near neighbor around Mg caused a drastic reduction in the intensities of multiple scattering resonances at higher energies. The optical switching behavior and changes in the x-ray spectra varied …
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman
Electrical & Computer Engineering Faculty Publications
CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …
Use Of An Epitaxial Baf2 Buffer Layer On Silicon To Control W03 Thin Film Growth, Luke D. Doucette
Use Of An Epitaxial Baf2 Buffer Layer On Silicon To Control W03 Thin Film Growth, Luke D. Doucette
Electronic Theses and Dissertations
The electronic and mechanical properties of tungsten trioxide (W03) thin films have been successfully utilized in both surface acoustic wave and chemiresistive microsensor devices for the detection of certain gas-phase species. A critical material aspect that can affect microsensor performance is the type and degree of crystallization within the sensing film. However, the inclusion of this added dimension into a thin film limits the number of viable substrates for which heteroepitaxy may be realized. For W03, this constraint has restricted its usage as a sensing material to being primarily coupled with sapphire substrates. Not only does sapphire promote structured film …