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High Mobility N-Type Field Effect Transistors Enabled By Wse2/Pdse2 Heterojunctions, Arthur Bowman Iii

Wayne State University Dissertations

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs) have emerged as a promising candidate for post-silicon electronics. Few-layer tungsten diselenide (WSe2), a well-studied TMD, has sown high hole mobility and ON/OFF ratio in field effect transistor (FET) devices. But the n-type performance of WSe2 is still quite limited by the presence of a substantial Schottky Barrier. Palladium diselenide, (PdSe2) is a newly discovered TMD that is of interest because of its high electron mobility, and moderate ON/OFF ratios. However, despite its relatively small bandgap, the n-type performance of few-layer PdSe2 FETs has also been limited by a Schottky barrier, …