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Effect Of Gadolinium Doping On The Electronic Band Structure Of Europium Oxide, Juan Colon Santana, Joonhee Michael An, Ning Wu, Kirill Belashchenko, Xianjie Wang, Pan Liu, Jinke Tang, Yaroslav Losovyj, I. N. Yakovkin, Peter Dowben
Effect Of Gadolinium Doping On The Electronic Band Structure Of Europium Oxide, Juan Colon Santana, Joonhee Michael An, Ning Wu, Kirill Belashchenko, Xianjie Wang, Pan Liu, Jinke Tang, Yaroslav Losovyj, I. N. Yakovkin, Peter Dowben
Jinke Tang
High quality films of EuO and Eu0.96Gd0.04O were grown on p-type Si(100) via pulsed laser deposition. X-raydiffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements showan apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.