Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 9 of 9
Full-Text Articles in Physics
Improving Thermoelectric Properties Of Chemically Synthesized Bi2te3-Based Nanocrystals By Annealing, Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Improving Thermoelectric Properties Of Chemically Synthesized Bi2te3-Based Nanocrystals By Annealing, Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Jeffrey Dyck
The power factors of chemically synthesized Bi2Te3 and Bi0.5Sb1.5Te3 nanocrystals (NCs) were improved up to 2.4 and 7.8 μW cm−1 K−2, respectively, which are significantly higher than previously reported values for chemically synthesized Bi2Te3 NCs and even comparable to the recently reported highest power factor of 5 μW cm−1 K−2 for Bi2Te3 NCs consolidated by spark plasma sintering. This improvement was achieved by annealing the NCs under argon protection, and the crystal structures and morphologies of these annealed NCs were characterized via XRD, SEM, and TEM measurements. The temperature-dependent thermoelectric properties of these modified NCs were explored on cold-pressed pellets …
Enhancing Thermoelectric Performance Of Ternary Nanocrystals Through Adjusting Carrier Concentration., Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Enhancing Thermoelectric Performance Of Ternary Nanocrystals Through Adjusting Carrier Concentration., Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Jeffrey Dyck
The carrier concentration of chemically synthesized Bi2Te3-based nanocrystals (NCs) is for the first time reported to be adjusted by forming ternary Bi2−xSbxTe3 NCs (x = 0.02, 0.05, 0.10, 0.20, 0.50, and 1.50) through partial substitution of Bi with Sb. Carrier concentrations of ternary Bi2−xSbxTe3 NCs were successfully adjusted by a factor of more than 10 controlled by the stoichiometric partial Sb/Bi substitution level. The power factors of the stoichiometric ternary Bi2−xSbxTe3 NCs improved three times compared to the parent Bi2Te3 due to the carrier concentration adjustment.
Nanostructured Bi2se3 Films And Their Thermoelectric Transport Properties., Xiaofeng Qiu, Leah Austin, Philip Muscarella, Jeffrey Dyck, Clemens Burda
Nanostructured Bi2se3 Films And Their Thermoelectric Transport Properties., Xiaofeng Qiu, Leah Austin, Philip Muscarella, Jeffrey Dyck, Clemens Burda
Jeffrey Dyck
No abstract provided.
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Jeffrey Dyck
The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb1–x Vx Te3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ , a signature of T C, moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.
Defect Structure Of Sb2−Xmnxte3 Single Crystals., Jaromír Horák, Petr LošŤÁK, Čestmír Drašar, Jeffrey Dyck, Zengzua Zhou, Cterid Uher
Defect Structure Of Sb2−Xmnxte3 Single Crystals., Jaromír Horák, Petr LošŤÁK, Čestmír Drašar, Jeffrey Dyck, Zengzua Zhou, Cterid Uher
Jeffrey Dyck
Incorporation of the transition metal elements in the tetradymite structure of Sb2Te3 has a strong influence on electronic properties. Recent studies have indicated that Mn substitutes on the Sb sublattice increases the carrier concentration of holes. However, the doping efficiency of Mn appears rather low in comparison to what it should be based on the measurements of magnetization, structural analysis, and transport properties. In this paper we address this issue by making detailed studies of the Hall effect and electrical resistivity and we explain the results with the aid of a model that takes into account interactions of the Mn …
Transport Coefficients Of Titanium-Doped Sb2te3 Single Crystals., Č. Drašar, M. Steinhart, P. Lošťák, H.-K. Shin, Jeffrey Dyck, C. Uher
Transport Coefficients Of Titanium-Doped Sb2te3 Single Crystals., Č. Drašar, M. Steinhart, P. Lošťák, H.-K. Shin, Jeffrey Dyck, C. Uher
Jeffrey Dyck
Titanium-doped single crystals (cTi=0–2×1020atomscm−3) were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3–300K. It was observed that with an increasing Ti content in the samples the electrical resistivity, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the …
Conduction Band Splitting And Transport Properties Of Bi2se3., J. Navrátil, J. Horák, T. Plecháček, S. Kamba, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Conduction Band Splitting And Transport Properties Of Bi2se3., J. Navrátil, J. Horák, T. Plecháček, S. Kamba, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Detailed transport studies of single crystals of Bi2Se3 were made in the temperature range of 2–300K, and the data were analyzed in terms of a model consisting of two groups of electrons—a centrosymmetrical lower conduction band and an upper conduction band located away from the Γ-point. Very good agreement with the experimental data is obtained assuming the electrons are scattered on acoustic phonons and ionized impurities. A rather strong influence of the latter mechanism is attributed to a large number of charged selenium vacancies in Bi2Se3. The fitted transport parameters were used to calculate the electronic portion of the thermal …
Transport Properties Of Bi2−Xinxse3 Single Crystals., J. Navrátil, T. Plecháček, J. Horák, S. Karamazov, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Transport Properties Of Bi2−Xinxse3 Single Crystals., J. Navrátil, T. Plecháček, J. Horák, S. Karamazov, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi2−xInxSe3 (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi2Se3 crystal lattice on the individual components of thermal conductivity is evaluated and discussed. Copyright 2001 Academic Press.
Preparation And Some Physical Properties Of Tetradymite-Type Sb2te3 Single Crystals Doped With Cds., P. LošŤÁK, Č. Drašar, A. Krejc ̆ Ova, L. Beneš, Jeffrey Dyck, W. Chen, C. Uher
Preparation And Some Physical Properties Of Tetradymite-Type Sb2te3 Single Crystals Doped With Cds., P. LošŤÁK, Č. Drašar, A. Krejc ̆ Ova, L. Beneš, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Single crystals of Sb2Te3 doped with CdS were prepared by a modified Bridgman method from the elements Sb and Te of 5N purity and the CdS compound of 4.5N purity. Samples were characterized by X-ray diffraction and by measurement of reflectance in the plasma resonance frequency region at room temperature. Furthermore, we made measurements of temperature dependence of the electrical resistivity, Hall and Seebeck coefficients, and thermal conductivity in the temperature range of 4.2–300K. In the process of crystal growth, CdS dissociated and it was assumed that the Cd-atoms formed substitutional defects in the Sb-sublattice (CdSb′) while the S-atoms formed …