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Articles 1 - 27 of 27
Full-Text Articles in Physics
Improving Thermoelectric Properties Of Chemically Synthesized Bi2te3-Based Nanocrystals By Annealing, Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Improving Thermoelectric Properties Of Chemically Synthesized Bi2te3-Based Nanocrystals By Annealing, Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Jeffrey Dyck
The power factors of chemically synthesized Bi2Te3 and Bi0.5Sb1.5Te3 nanocrystals (NCs) were improved up to 2.4 and 7.8 μW cm−1 K−2, respectively, which are significantly higher than previously reported values for chemically synthesized Bi2Te3 NCs and even comparable to the recently reported highest power factor of 5 μW cm−1 K−2 for Bi2Te3 NCs consolidated by spark plasma sintering. This improvement was achieved by annealing the NCs under argon protection, and the crystal structures and morphologies of these annealed NCs were characterized via XRD, SEM, and TEM measurements. The temperature-dependent thermoelectric properties of these modified NCs were explored on cold-pressed pellets …
Enhancing Thermoelectric Performance Of Ternary Nanocrystals Through Adjusting Carrier Concentration., Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Enhancing Thermoelectric Performance Of Ternary Nanocrystals Through Adjusting Carrier Concentration., Yixin Zhao, Jeffrey Dyck, Brett Hernandez, Clemens Burda
Jeffrey Dyck
The carrier concentration of chemically synthesized Bi2Te3-based nanocrystals (NCs) is for the first time reported to be adjusted by forming ternary Bi2−xSbxTe3 NCs (x = 0.02, 0.05, 0.10, 0.20, 0.50, and 1.50) through partial substitution of Bi with Sb. Carrier concentrations of ternary Bi2−xSbxTe3 NCs were successfully adjusted by a factor of more than 10 controlled by the stoichiometric partial Sb/Bi substitution level. The power factors of the stoichiometric ternary Bi2−xSbxTe3 NCs improved three times compared to the parent Bi2Te3 due to the carrier concentration adjustment.
Nanostructured Bi2se3 Films And Their Thermoelectric Transport Properties., Xiaofeng Qiu, Leah Austin, Philip Muscarella, Jeffrey Dyck, Clemens Burda
Nanostructured Bi2se3 Films And Their Thermoelectric Transport Properties., Xiaofeng Qiu, Leah Austin, Philip Muscarella, Jeffrey Dyck, Clemens Burda
Jeffrey Dyck
No abstract provided.
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Jeffrey Dyck
The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb1–x Vx Te3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ , a signature of T C, moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.
Defect Structure Of Sb2−Xmnxte3 Single Crystals., Jaromír Horák, Petr LošŤÁK, Čestmír Drašar, Jeffrey Dyck, Zengzua Zhou, Cterid Uher
Defect Structure Of Sb2−Xmnxte3 Single Crystals., Jaromír Horák, Petr LošŤÁK, Čestmír Drašar, Jeffrey Dyck, Zengzua Zhou, Cterid Uher
Jeffrey Dyck
Incorporation of the transition metal elements in the tetradymite structure of Sb2Te3 has a strong influence on electronic properties. Recent studies have indicated that Mn substitutes on the Sb sublattice increases the carrier concentration of holes. However, the doping efficiency of Mn appears rather low in comparison to what it should be based on the measurements of magnetization, structural analysis, and transport properties. In this paper we address this issue by making detailed studies of the Hall effect and electrical resistivity and we explain the results with the aid of a model that takes into account interactions of the Mn …
Transport Coefficients Of Titanium-Doped Sb2te3 Single Crystals., Č. Drašar, M. Steinhart, P. Lošťák, H.-K. Shin, Jeffrey Dyck, C. Uher
Transport Coefficients Of Titanium-Doped Sb2te3 Single Crystals., Č. Drašar, M. Steinhart, P. Lošťák, H.-K. Shin, Jeffrey Dyck, C. Uher
Jeffrey Dyck
Titanium-doped single crystals (cTi=0–2×1020atomscm−3) were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3–300K. It was observed that with an increasing Ti content in the samples the electrical resistivity, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the …
Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher
Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher
Jeffrey Dyck
We report on magnetic and electrical transport properties of Sb2-x Crx Te3 single crystals with 0⩽x⩽0.095 over temperatures from 2 K to 300 K . A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x>0.014 ), attaining a maximum value of 20 K for x=0.095 . Hysteresis below TC for the applied field parallel to the c axis is observed in both magnetization and Hall-effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3 d3 ) valence state, substituting for antimony in the host …
Conduction Band Splitting And Transport Properties Of Bi2se3., J. Navrátil, J. Horák, T. Plecháček, S. Kamba, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Conduction Band Splitting And Transport Properties Of Bi2se3., J. Navrátil, J. Horák, T. Plecháček, S. Kamba, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Detailed transport studies of single crystals of Bi2Se3 were made in the temperature range of 2–300K, and the data were analyzed in terms of a model consisting of two groups of electrons—a centrosymmetrical lower conduction band and an upper conduction band located away from the Γ-point. Very good agreement with the experimental data is obtained assuming the electrons are scattered on acoustic phonons and ionized impurities. A rather strong influence of the latter mechanism is attributed to a large number of charged selenium vacancies in Bi2Se3. The fitted transport parameters were used to calculate the electronic portion of the thermal …
Cubic : Bulk Thermoelectric Materials With High Figure Of Merit, Kuei Hsu, Sim Loo, Fu Guo, Wei Chen, Jeffrey Dyck, Cterid Uher, Tim Hogan, E. Polychroniadis, Mercouri Kanatzidis
Cubic : Bulk Thermoelectric Materials With High Figure Of Merit, Kuei Hsu, Sim Loo, Fu Guo, Wei Chen, Jeffrey Dyck, Cterid Uher, Tim Hogan, E. Polychroniadis, Mercouri Kanatzidis
Jeffrey Dyck
The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit of ~2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the material is expected to outperform all reported bulk thermoelectrics, thereby earmarking …
Effect Of Sn Substituting For Sb On The Low-Temperature Transport Properties Of Ytterbium-Filled Skutterudites, J. Yang, D. Morelli, G. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Effect Of Sn Substituting For Sb On The Low-Temperature Transport Properties Of Ytterbium-Filled Skutterudites, J. Yang, D. Morelli, G. Meisner, W. Chen, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We examine the effect of alloying Sn on the Sb site of ytterbium-filled skutterudites, a promising class of thermoelectric materials. We report measurements of the Hall effect, electrical resistivity, Seebeck coefficient, and thermal conductivity between 2 and 300 K on two series of samples having different ytterbium filling fractions: Yb0.19Co4Sb12-xSnx, with x=0, 0.05, 0.1, and 0.2, and Yb0.5Co4Sb12-xSnx, with x=0.5, 0.6, 0.8, 0.83, and 0.9. We find that the substitution of Sn does not lower the electron concentration of these samples, but rather gives rise to a p-type carrier. Hall measurement data for Yb0.5Co4Sb11.17Sn0.83 can be understood in the context …
Micro Thermoelectric Cooler Fabrication: Growth And Characterization Of Patterned Sb2te3 And Bi2te3 Films ., Luciana Da Silva, M. Kaviany, A. Dehennis, Jeffrey Dyck
Micro Thermoelectric Cooler Fabrication: Growth And Characterization Of Patterned Sb2te3 And Bi2te3 Films ., Luciana Da Silva, M. Kaviany, A. Dehennis, Jeffrey Dyck
Jeffrey Dyck
A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during thermoelectric film deposition is desired, it has been limited by the degradation of the photoresist used for patterning. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films are reported, and preliminary results show that excess tellurium increases the Seebeck …
Transport Coefficients Of Titanium-Doped Sb2te3 Crystals., P. Svanda, P. LošŤÁK, Č. Drašar, Jeffrey Dyck
Transport Coefficients Of Titanium-Doped Sb2te3 Crystals., P. Svanda, P. LošŤÁK, Č. Drašar, Jeffrey Dyck
Jeffrey Dyck
Titanium-doped single crystals (cTi = 0 to 2×1020 atoms cm-3) were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of …
Electrical Conductivity And Thermopower Of Cu–Sio[Sub 2] Nanogranular Films., W. Chen, J. Lin, X. Zhang, H. Shin, Jeffrey Dyck, C. Uher
Electrical Conductivity And Thermopower Of Cu–Sio[Sub 2] Nanogranular Films., W. Chen, J. Lin, X. Zhang, H. Shin, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We have measured the thermopower S and electrical conductivity σ in a series of Cu[sub x](SiO[sub 2])[sub 1-x] nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ √T to σ∝ T[sup 1/3] is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Jeffrey Dyck
We report on a novel diluted magnetic semiconductor based on the Sb2Te3 tetradymite structure doped with very low concentrations of vanadium (1–3at%). Anisotropy in the magnetic hysteresis loops and magnetoresistance are observed at temperatures below the ferromagnetic ordering temperature. A Curie temperature of 24K is observed for Sb1.97V0.03Te3.
Thermoelectric Properties Of K[Subscript 2]Bi[Subscript 8-X]Sb[Subscript X]Se[Subscript 13] Solid Solutions And Se Doping [Et Al.], Theodora Kyratski, Jeffrey Dyck, Wei Chen
Thermoelectric Properties Of K[Subscript 2]Bi[Subscript 8-X]Sb[Subscript X]Se[Subscript 13] Solid Solutions And Se Doping [Et Al.], Theodora Kyratski, Jeffrey Dyck, Wei Chen
Jeffrey Dyck
Our efforts to improve the thermoelectric properties of β-K2Bi8Se13, led to systematic studies of solid solutions of the type β-K2Bi8−xSbxSe13. The charge transport properties and thermal conductivities were studied for selected members of the series. Lattice thermal conductivity decreases due to the mass fluctuation generated in the lattice by the mixed occupation of Sb and Bi atoms. Se excess as a dopant was found to increase the figure-of merit of the solid solutions.
Transport Properties Of Bi2−Xinxse3 Single Crystals., J. Navrátil, T. Plecháček, J. Horák, S. Karamazov, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Transport Properties Of Bi2−Xinxse3 Single Crystals., J. Navrátil, T. Plecháček, J. Horák, S. Karamazov, P. LošŤÁK, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi2−xInxSe3 (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi2Se3 crystal lattice on the individual components of thermal conductivity is evaluated and discussed. Copyright 2001 Academic Press.
Anomalous Barium Filling Fraction And N-Type Thermoelectric Performance Of Ba[Sub Y]Co[Sub 4]Sb[Sub 12]., L. Chen, T. Kawahara, X. Tang, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
Anomalous Barium Filling Fraction And N-Type Thermoelectric Performance Of Ba[Sub Y]Co[Sub 4]Sb[Sub 12]., L. Chen, T. Kawahara, X. Tang, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Barium-filled skutterudites BaCoSb with an anomalously large filling fraction of up to y=0.44 have been synthesized. The lattice parameters increase linearly with Ba content. Magnetic susceptibility data show that BaCoSb is paramagnetic, which implies that some of the Co atoms in BaCoSb have acquired a magnetic moment. The presence of the two different valence states of Co (Co3+ and Co2+) leads to the anomalously large barium filling fraction even without extra charge compensation. All samples show n-type conduction. The electrical conductivity increases with increasing the Ba filling fraction. The lattice thermal conductivity of BaCoSb is significantly depressed as compared to …
A2bi8se1 3 (A = Rb, Cs), Csbi3.67se6, And Babi2< /Inf>Se4: New Ternary Semiconducting Bismuth Selenides, Lykourgis Iordanidis, Paul Brazis, Theodora Kyratsi, John Irel, Melissa Lane, Carl Kannewurf, Wei Chen, Jeffrey Dyck, Ctirad Uher, Nishant Ghelani, Tim Hogan, Mercouri Kanatzidis
A2bi8se1 3 (A = Rb, Cs), Csbi3.67se6, And Babi2< /Inf>Se4: New Ternary Semiconducting Bismuth Selenides, Lykourgis Iordanidis, Paul Brazis, Theodora Kyratsi, John Irel, Melissa Lane, Carl Kannewurf, Wei Chen, Jeffrey Dyck, Ctirad Uher, Nishant Ghelani, Tim Hogan, Mercouri Kanatzidis
Jeffrey Dyck
No abstract provided.
The Influence Of Ni On The Transport Properties Of Cosb3, C. Uher, Jeffrey Dyck, W. Chen, G. Meisner, J. Yang
The Influence Of Ni On The Transport Properties Of Cosb3, C. Uher, Jeffrey Dyck, W. Chen, G. Meisner, J. Yang
Jeffrey Dyck
The effect of Ni doping on the Co site of the binary skutterudite CoSb3 is investigated. We measured resistivity, Hall effect, magnetoresistance, thermopower, thermal conductivity, and magnetization of a series of samples of the form Co1-xNixSb3 with x in the range x=0 to x=0.01. We find that Ni takes the tetravalent state Ni4+, assumes the d6 electronic configuration for the lower energy non-bonding orbitals, and gives an electron to the conduction band. Ni doping dramatically suppresses the thermal conductivity, changes the temperature dependence of the thermopower, and increases the carrier concentration. Low temperature anomalies in thermopower, Hall coefficient and magnetoresistance …
Low Temperature Thermoelectric Properties Of Ni Doped N-Type Filled Skutterudites Ba0.3co4sb12 ., W. Chen, Jeffrey Dyck, C. Uher, L. Chen, X. Tang, T. Hirai
Low Temperature Thermoelectric Properties Of Ni Doped N-Type Filled Skutterudites Ba0.3co4sb12 ., W. Chen, Jeffrey Dyck, C. Uher, L. Chen, X. Tang, T. Hirai
Jeffrey Dyck
n-type Ba filled skutterudites doped with Ni, Ba0.3Ni xCo4-xSb12 with 0⩽x⩽0.2, have been synthesized and the Seebeck coefficient, thermal conductivity, electrical resistivity and Hall coefficient have been measured. ZT of 1.2 has been achieved at 800 K with x=0.05. The thermal conductivity data are fitted and the rattling effect of the Ba atoms is identified through a resonance scattering term. The Hall mobility is studied and a mixed scattering mechanism of acoustic phonons and ionized impurities based on a single, rigid band picture is presented. The role of Ni atoms in enhancing the thermoelectric performance is discussed
Multi-Filling Approach For The Improvement Of Thermoelectric Properties Of Skutterudites., L. Chen, X. Tang, T. Kawahara, Jeffrey Dyck
Multi-Filling Approach For The Improvement Of Thermoelectric Properties Of Skutterudites., L. Chen, X. Tang, T. Kawahara, Jeffrey Dyck
Jeffrey Dyck
Several skutterudite antimonides filled with atoms of different kinds, (Ba, M)yCo4Sb12 (M=Ce, La, Sr), have been synthesized by the combination of solid state reaction and melting methods. Thermal conductivity of (Ba,Sr)yCo4 Sb12 samples shows a behavior similar to that of BayCo4Sb12. Adding a small amount of Ce or La to the BayCo4Sb12 system is effective in further reducing the lattice thermal conductivity. The difference in the ionic radii of the two co-filler atoms is the most sensitive factor for scattering of phonons. The multi-filled (Ba, M)yCo4Sb12 (M=Sr, Ce, La) show lower Seebeck coefficients as compared to the single-filled BayCo 4Sb12 …
High-Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Zhang, R. Yuan, L. Chen, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
High-Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Zhang, R. Yuan, L. Chen, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type BayNixCo4-xSb12 (x = 0-0.1, y = 0.-0.4) were investigated at temperature range of 300 to 900 K. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When y was fixed at 0.3, thermal conductivity decreased with increasing Ni content and reached a minimum value at about x = 0.05. Lattice thermal conductivity decreased with increasing Ni content, monotonously (y ≤ 0.1). Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature and decreased with increasing …
Preparation And Some Physical Properties Of Tetradymite-Type Sb2te3 Single Crystals Doped With Cds., P. LošŤÁK, Č. Drašar, A. Krejc ̆ Ova, L. Beneš, Jeffrey Dyck, W. Chen, C. Uher
Preparation And Some Physical Properties Of Tetradymite-Type Sb2te3 Single Crystals Doped With Cds., P. LošŤÁK, Č. Drašar, A. Krejc ̆ Ova, L. Beneš, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Single crystals of Sb2Te3 doped with CdS were prepared by a modified Bridgman method from the elements Sb and Te of 5N purity and the CdS compound of 4.5N purity. Samples were characterized by X-ray diffraction and by measurement of reflectance in the plasma resonance frequency region at room temperature. Furthermore, we made measurements of temperature dependence of the electrical resistivity, Hall and Seebeck coefficients, and thermal conductivity in the temperature range of 4.2–300K. In the process of crystal growth, CdS dissociated and it was assumed that the Cd-atoms formed substitutional defects in the Sb-sublattice (CdSb′) while the S-atoms formed …
Synthesis And High Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Chen, T. Goto, Jeffrey Dyck
Synthesis And High Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Chen, T. Goto, Jeffrey Dyck
Jeffrey Dyck
Single-phase filled skutterudite compounds BayNx Co4-xSb12 (x=0-0.1, y=0-0.4) were synthesized by a two-step solid state reaction. Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type Ba yNixCo4-xSb12 were investigated. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When barium filling fraction (y) was fixed at 0.3, the thermal conductivity decreased with increasing Ni content, and reached a minimum value at about x=0.05. Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature, and decreased with increasing Ba filling fraction and Ni content. A …
Thermoelectric Properties Of Yb-Filled And Sn-Compensated Skutterudites ., Jihui Yang, Gregory Meisner, Wei Chen, Jeffrey Dyck, Ctirad Uher
Thermoelectric Properties Of Yb-Filled And Sn-Compensated Skutterudites ., Jihui Yang, Gregory Meisner, Wei Chen, Jeffrey Dyck, Ctirad Uher
Jeffrey Dyck
The effect of alloying tin on the antimony site of ytterbium-filled skutterudites is examined. We performed measurements of Hall effect, electrical resistivity, Seebeck coefficient and thermal conductivity on the series Yb0.5Co4Sb12-x Snx, with x=0.5, 0.6, 0.8 and 0.83. We find that the substitution of tin does not alter the position of the Fermi level with respect to the conduction band of these heavily doped semiconducting samples, but rather it gives rise to a p-type band. Experimental data for x=0.83 can be understood in the context of a two-carrier electrical conduction. Thermal conductivity of these ytterbium-filled skutterudites is significantly suppressed with …
Transport And Magnetic Properties Of Co1-Xnixsb3 With X Less Than 0.01, Jeffrey Dyck, W. Chen, Y. Yang, G. Meisner, C. Uher
Transport And Magnetic Properties Of Co1-Xnixsb3 With X Less Than 0.01, Jeffrey Dyck, W. Chen, Y. Yang, G. Meisner, C. Uher
Jeffrey Dyck
The filled skutterudite compounds based on the binary skutterudite CoSb3 are currently being investigated for their potential application as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, because it has one more electron in its valence shell than Co. We present electrical resistivity, thermopower, Hall effect and magnetic susceptibility measurements on polycrystalline, n-type Co1-xNixSb3 with x less than 0.01. A model which takes into account conduction of electrons residing in the conduction band in addition to hopping conduction within an impurity "band" formed …
Synthesis Of Bulk Polycrystalline Indium Nitride At Subatmospheric Pressures., Jeffrey Dyck, K. Kash, C. Hayman, A. Argoitia, M. Grossner, J. Angus, W.-L. Zhou
Synthesis Of Bulk Polycrystalline Indium Nitride At Subatmospheric Pressures., Jeffrey Dyck, K. Kash, C. Hayman, A. Argoitia, M. Grossner, J. Angus, W.-L. Zhou
Jeffrey Dyck
Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium with nitrogen from microwave plasma sources. The structure was confirmed by x-ray diffraction, electron diffraction, and elemental analysis. Two types of growth were observed: (i) dendritic crystals on the original melt surface, and (ii) hexagonal platelets adjacent to the In metal source on the upper edge of the crucible. The method does not involve a foreign substrate to initiate growth and is a potential alternative to the high-pressure techniques normally associated with bulk growth of indium nitride. The lattice parameters were a = 3.5366 ± 0.0005 angstrom and c = 5.7009 …