Physics Commons^™

Ferroelectric Domain Wall Memristor, James P. V. Mcconville, Haidong Lu, Bo Wang, Yueze Tan, Charlotte Cochard, Michele Conroy, Kalani Moore, Alan Harvey, Ursel Bangert, Long-Qing Chen, Alexei Gruverman, J. M. Gregg

Alexei Gruverman Publications

A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, …