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Full-Text Articles in Physics
Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali
Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …
Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle
Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle
Electrical & Computer Engineering Faculty Publications
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7 × 1020 cm-3 …
Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular …
Magnetic And Transport Properties Of Nimnal Thin Films, Andriy Vovk, Minghui Yu, Leszek Malkinski, Charles O'Connor, Zhenjun Wang, Eden Durant, Jinke Tang, Vladimir Golub
Magnetic And Transport Properties Of Nimnal Thin Films, Andriy Vovk, Minghui Yu, Leszek Malkinski, Charles O'Connor, Zhenjun Wang, Eden Durant, Jinke Tang, Vladimir Golub
Physics Faculty Publications
The magnetic and transport properties of Ni2MnAl thin films prepared using pulse laser deposition were investigated. It was shown that the films are granular and multiphase. Contrary to the data reported earlier we observe nonmonotonic temperature dependence of resistance with minimum in the vicinity of 100 K for the films deposited on substrates held at 773 K and negative magnetoresistance (MR) values of about 2.5% at 5 K and 1.6% at RT in magnetic field of 50 kOe. These values of MR are the highest reported up to date for Ni2MnAl films. Large negative MR in …
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]