Physics Commons^™

Selective Growth Of Epitaxial Sr2Iro4 By Controlling Plume Dimensions In Pulsed Laser Deposition, Sung S. Ambrose Seo, J. Nichols, J. Hwang, Jsaminka Terzic, John H. Gruenewald, Maryam Souri, Justin K. Thompson, John G. Connell, Gang Cao

Physics and Astronomy Faculty Publications

We report that epitaxial Sr₂IrO₄ thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Sr_n+1Ir_nO_3n+1), conventional PLD methods often result in mixed phases of Sr₂IrO₄ (n = 1), Sr₃Ir₂O₇ (n = 2), and SrIrO₃ (n = ∞). We have discovered that reduced PLD plume dimensions and slow deposition rates are the key for stabilizing pure Sr₂IrO₄ phase thin-films, identified by real-time in-situ monitoring of their optical spectra. …

Positive Exchange Bias In Epitaxial Permalloy/Mgo Integrated With Si (100), S. S. Rao, J. T. Prater, Fan Wu, S. Nori, D. Kumar, Lanping Yue, Sy_Hwang Liou, Jagdish Narayan

Sy-Hwang Liou Publications

In magnetic random access memory (MRAM) devices, soft magnetic thin film elements such as permalloy (Py) are used as unit cells of information. The epitaxial integration of these elements with the technologically important substrate Si (100) and a thorough understanding of their magnetic properties are critical for CMOS-based magnetic devices. We report on the epitaxial growth of Ni_82.5Fe_17.5 (permalloy, Py) on Si (100) using a TiN/MgO buffer layer. Initial stages of growth are characterized by the formation of discrete islands that gradually merge into a continuous film as deposition times are extended. Interestingly, we find that the …

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm ². Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …

Stable Highly Conductive Zno Via Reduction Of Zn Vacancies, David C. Look, Timothy C. Droubay, Scott A. Chambers

Physics Faculty Publications

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H₂produces a resistivity of 1.5 × 10⁻⁴ Ω-cm, stable to 500 °C. The resistivity can be further reduced to 1.2 × 10⁻⁴ Ω-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration N_A to 5 × 10¹⁹ cm⁻³, only 3% of the Ga-donor concentration N_D of 1.6 × 10²¹ cm⁻³, with N_D and N_A determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 …

Pulsed Laser Deposition Of Graphite Counter Electrodes For Dye-Sensitized Solar Cells, Krishna P. Acharya, Himal Khatri, Sylvain Marsillac, Bruno Ullrich, Pavel Anzenbacher, Mikhail Zamkov

Electrical & Computer Engineering Faculty Publications

We report on pulsed laser deposition of graphite onto flexible plastic and conductive glass substrates for use as a counter electrode in dye-sensitized solar cells. The efficiency of as-prepared graphite electrodes was tested using CdS-sensitized solar cell architecture resulting in external quantum efficiency comparable to that of conventional platinum counter electrodes. This work highlights the possibility of using pulsed laser deposited graphite as a low-cost alternative to platinum, which could be fabricated both on flexible and rigid substrates.

Highly Conductive Zno Grown By Pulsed Laser Deposition In Pure Ar, Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang

Physics Faculty Publications

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO₂/Si, Al₂O₃, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10⁻⁴ Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O₂ followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical …

Mobility Analysis Of Highly Conducting Thin Films: Application To Zno, David C. Look, K. D. Leedy, D. H. Tomich, B. Bayraktaroglu

Physics Faculty Publications

Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a forming-gas atmosphere (5% H₂ in Ar). The mobility as a function of thickness d is analyzed by a simple formula involving only ionized-impurity and boundary scattering and having a single fitting parameter, the acceptor/donor concentration ratio K = N_A/N_D. For samples with d = 3–100 nm, K_avg = 0.41, giving N_D = 4.7×10²⁰ and N_A = 1.9×10²⁰ cm⁻³. Thicker samples require a …

Ferroelectric Phase Transitions In Three-Component Short-Period Superlattices Studied By Ultraviolet Raman Spectroscopy, Dmitri Tenne, H. N. Lee, R. S. Katiyar, X. X. Xi

Physics Faculty Publications and Presentations

Vibrational spectra of three-component BaTiO₃SrTiO₃CaTiO₃ short-period superlattices grown by pulsed laser deposition with atomic-layer control have been investigated by ultraviolet Raman spectroscopy. Monitoring the intensity of the first-order phonon peaks in Raman spectra as a function of temperature allowed determination of the ferroelectric phase transition temperature, T_c. Raman spectra indicate that all superlattices remain in the tetragonal ferroelectric phase with out-of-plane polarization in the entire temperature range below T_c. The dependence of T_c on the relative thicknesses of ferroelectric (BaTiO₃) to non-ferroelectric materials (SrTiO₃ and CaTiO_{3 …}

Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle

Electrical & Computer Engineering Faculty Publications

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7 × 10²⁰ cm^{-3 …}

Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 10¹¹ s^-1. The RHEED specular …

Near-Field Thermal Radiative Transfer And Thermoacoustic Effects From Vapor Plumes Produced By Pulsed Co/Sub 2 /Laser Ablation Of Bulk Water, S. I. Kudryashov, Kevin Lyon, S. D. Allen

Mechanical Engineering - Daytona Beach

Submillimeter deep heating of bulk water by thermal radiation from ablative water plumes produced by a 10.6 μm transversely excited atmospheric C O2 laser and the related acoustic generation has been studied using a contact time-resolved photoacoustic technique. Effective penetration depths of thermal radiation in water were measured as a function of incident laser fluence and the corresponding plume temperatures were estimated. The near-field thermal and thermoacoustic effects of thermal radiation in laser-ablated bulk water and their potential near-field implications are discussed.

c 2006 American Institute of Physics

Magnetic And Transport Properties Of Nimnal Thin Films, Andriy Vovk, Minghui Yu, Leszek Malkinski, Charles O'Connor, Zhenjun Wang, Eden Durant, Jinke Tang, Vladimir Golub

Physics Faculty Publications

The magnetic and transport properties of Ni₂MnAl thin films prepared using pulse laser deposition were investigated. It was shown that the films are granular and multiphase. Contrary to the data reported earlier we observe nonmonotonic temperature dependence of resistance with minimum in the vicinity of 100 K for the films deposited on substrates held at 773 K and negative magnetoresistance (MR) values of about 2.5% at 5 K and 1.6% at RT in magnetic field of 50 kOe. These values of MR are the highest reported up to date for Ni₂MnAl films. Large negative MR in …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]