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Articles 31 - 32 of 32
Full-Text Articles in Physics
Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram
Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram
Legacy Theses & Dissertations (2009 - 2024)
III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values
Pulsed Inductive Plasma Studies By Spectroscopy And Internal Probe Methods, Warner C. Meeks
Pulsed Inductive Plasma Studies By Spectroscopy And Internal Probe Methods, Warner C. Meeks
Doctoral Dissertations
The broad effort of the Missouri Plasmoid Experiment is to elucidate the energy conversion processes in a pulsed inductive discharge due to the presence of plasma. The test article is a 440 to 490 kHz theta-pinch (or solenoidal) geometry coil with a stored energy of around 80 joules. In this work experimental hydrogen, helium, argon and xenon data at back-fill pressures of 10 to 100 mTorr (1.3 to 133.3 Pa) are obtained and interpreted. Spectral and internal probe studies were performed on MPX Mk.I and Mk.II devices, respectively. IR spectra were acquired in the Mk.I device for argon and xenon. …