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Metal Modulation Epitaxy Growth For Extremely High Hole Concentrations Above 10(19) Cm(-3) In Gan, Gon Namkoong, Elaissa Trybus, Kyung Keun Lee, Michael Moseley, W. Alan Doolittle, David C. Look

Applied Research Center Publications

The free hole carriers in GaN have been limited to concentrations in the low 10¹⁸ cm⁻³ range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ~10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ~1.5 x 10¹⁹ cm⁻³.

© 2008 American Institute of Physics.