Physics Commons^™

Measurements Of Magnetic Field Penetration Of Materials For Superconducting Radiofrequency Cavities, Iresha Harshani Senevirathne

Physics Theses & Dissertations

Superconducting Radio Frequency (SRF) cavities used in particle accelerators are typically formed from or coated with superconducting materials. Currently high purity niobium is the material of choice for SRF cavities which have been optimized to operate near their theoretical field limits. This brings about the need for significant R&D efforts to develop next generation superconducting materials which could outperform Nb and keep up with the demands of new accelerator facilities. To achieve high quality factors and accelerating gradients, the cavity material should be able to remain in the superconducting Meissner state under high RF magnetic field without penetration of quantized …

Synthesis And Optimization Of Vo₂ Thin Films For Phase Transition Applications By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala

Electrical & Computer Engineering Theses & Dissertations

Among many Vanadium oxides and suboxides, VO₂ has received considerable attention due to its remarkable metal-insulator transition (MIT) or semiconductor-metal transition (SMT) behavior, a reversible change in its electrical and optical properties that occurs due to a phase transition near a temperature of 68°C. Electrically, the resistivity of VO₂ can be changed as large as 4-5 orders of magnitude. Optically, the transmittance drops dramatically above the transition temperature in the metallic state where the VO₂ film becomes highly reflective in the infrared region. All these properties result in structural phase transformation from a low temperature monoclinic to …

Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu

Open Access Theses & Dissertations

Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.

The Impact Of Growth Conditions On Cubic Znmgo Ultraviolet Sensors, Ryan Boutwell

Electronic Theses and Dissertations

Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into …

Investigation Of Nbnx Thin Films And Nanoparticles Grown By Pulsed Laser Deposition And Thermal Diffusion, Ashraf Hassan Farha

Electrical & Computer Engineering Theses & Dissertations

Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (λ = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films.

When the …

Plasmonic And Photonic Designs For Light Trapping In Thin Film Solar Cells, Liming Ji

Graduate Theses and Dissertations

Thin film solar cells are promising to realize cheap solar energy. Compared to conventional wafer cells, they can reduce the use of semiconductor material by 90%. The efficiency of thin film solar cells, however, is limited due to insufficient light absorption. Sufficient light absorption at the bandgap of semiconductor requires a light path more than 10x the thickness of the semiconductor. Advanced designs for light trapping are necessary for solar cells to absorb sufficient light within a limited volume of semiconductor. The goal is to convert the incident light into a trapped mode in the semiconductor layer.

In this dissertation, …

Improving The Efficiency Of Organic Solar Cells By Varying The Material Concentration In The Photoactive Layer, Kevin Anthony Latimer

Electrical & Computer Engineering Theses & Dissertations

Polymer-fullerene bulk heterojunction solar cells have been a rapidly improving technology over the past decade. To further improve the relatively low energy conversion efficiencies of these solar cells, several modifications need to be made to the overall device structure. Emerging technologies include cells that are fabricated with interfacial layers to facilitate charge transport, and tandem structures are being introduced to harness the absorption spectrum of polymers with varying bandgap energies.

When new structures are implemented, each layer of the cell must be optimized in order for the entire device to function efficiently. The most volatile layer of these devices is …

Growth Of Alkali Antimonide Photosensitive Thin Films, George Annobil

Electrical & Computer Engineering Theses & Dissertations

The experiment performed in this research addresses the growth of an alkali antimonide photosensitive film. Research was conducted to understand and develop a growth technique for a unique vapor deposition system in a vacuum environment. Specifically, the grown film will be utilized as a photocathode, and hence quantum efficiency (QE) and photocathode lifetime measurements are conducted. The research presents the successful growth of the binary compound cesium antimonide with achieved quantum efficiency of ~0.07% at ~240V anode bias. This experimental result demonstrated that the deposition technique was reliable in producing a feasible cathode. It further allowed the verification of theoretical …

Reflection-High Energy Electron Diffraction Study Of Si(100) Homoepitaxy By Femtosecond Pulsed Laser Deposition, Mohammed S. Hegazy

Electrical & Computer Engineering Theses & Dissertations

The dynamics of femtosecond pulsed laser deposition (fsPLD) of Si(!00)-1 x I and Si(!00)-2x I homoepitaxy are studied by in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). The effects of substrate temperature, laser fluence and the pressure of a passive gas on the Si(!00)-1 x I growth mode are discussed. It is shown that films grow following the Volmer-Weber (3D) growth mode. The substrate temperature largely affects the morphology of the grown film. Below ~ 400 °C (at laser fluence of~ 1.9 J/cm²), randomly oriented 3D clusters are grown. This is shown …