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Old Dominion University

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Full-Text Articles in Physics

Surface Debye Temperature Measurement With Reflection High-Energy Electron Diffraction, H. E. Elsayed-Ali Jan 1996

Surface Debye Temperature Measurement With Reflection High-Energy Electron Diffraction, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Measurement of the surface mean-square atomic vibrational amplitude, or equivalently the surface Debye temperature, with reflection high-energy electron diffraction is discussed. Low-index surfaces of lead are used as examples. Particular details are given about the temperature-dependent diffraction pattern of Pb(100) in the Debye-Waller region. The use of reflection high-energy electron diffraction for measurement of the substrate surface temperature in thin-film deposition chambers is suggested. © 1996 American Institute of Physics.

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Modelling An Optical Fiber Bragg Grating, Claudio Oliveira Egalon Jan 1996

Modelling An Optical Fiber Bragg Grating, Claudio Oliveira Egalon

Electrical & Computer Engineering Theses & Dissertations

A theoretical investigation of a single mode optical fiber with one and two superimposed Bragg grating is presented. The formulation relies in the determination of an approximate solution in the asymptotic region of one of the fiber parameters. A correction is then applied to the asymptotic solution using the Method of the Successive Approximations also known as the Piccard Method. The approximation was then compared to the numerical solution using the Runge-Kutta method. Assuming that each Bragg grating has modulation frequencies given by Ω1 and Ω2, it has been found that the second Bragg grating shifts the …

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Compensation And Characterization Of Gallium Arsenide, Randy A. Roush Jan 1995

Compensation And Characterization Of Gallium Arsenide, Randy A. Roush

Electrical & Computer Engineering Theses & Dissertations

The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …

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Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce Jan 1995

Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce

Bioelectrics Publications

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …

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Effects Of Large Aspect Ratios And Fluctuations On Hard X-Ray-Detection In Lower Hybrid Driven Divertor Tokamaks, Linda L. Vahala, George Vahala, Paul Bonoli Jan 1995

Effects Of Large Aspect Ratios And Fluctuations On Hard X-Ray-Detection In Lower Hybrid Driven Divertor Tokamaks, Linda L. Vahala, George Vahala, Paul Bonoli

Electrical & Computer Engineering Faculty Publications

It is shown that lower hybrid wave scattering from fluctuations plays a critical role in large aspect ratio divertor plasmas even through the edge density fluctuation levels are only at 1%. This is seen in the theoretically calculated electron power-density profiles which can be directly correlated to the standard experimental chordal hard x-ray profiles. It thus seems that fluctuation effects must be included in determining rf current-density profiles.

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Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu Jan 1995

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

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Reflection High-Energy Electron-Diffraction Study Of Surface Disorder And Anomalous Expansion Of Pb(100), D. Tang, H. E. Elsayed-Ali Jan 1994

Reflection High-Energy Electron-Diffraction Study Of Surface Disorder And Anomalous Expansion Of Pb(100), D. Tang, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The temperature-dependent surface structural behavior of Pb(100) is studied using reflection high-energy electron diffraction. Anomalous surface expansion for temperatures between room temperature to about 500 K is observed. A high density of surface vacancies appears at temperatures above ~ 500 K. © 1994 The American Physical Society.

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A Magnetic Suspension System With A Large Angular Range, Colin P. Britcher, Mehran Ghofrani Jan 1993

A Magnetic Suspension System With A Large Angular Range, Colin P. Britcher, Mehran Ghofrani

Mechanical & Aerospace Engineering Faculty Publications

In order to explore and develop technology required for the magnetic suspension of objects over large ranges of orientation, a small-scale laboratory system, the large-angle magnetic suspension test fixture (LAMSTF) has been constructed at NASA Langley Research Center. This apparatus falls into the category of large-gap, actively stabilized magnetic levitation systems. The hardware comprises five conventional electromagnets in a circular arrangement, each driven from a separate bipolar power amplifier. Electromagnet currents are commanded by a digital control system, implemented on a microcomputer, which in turn derives the position and attitude of the suspended element from an infrared optical system. The …

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Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron Jan 1993

Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron

Electrical & Computer Engineering Faculty Publications

The transport of femtosecond-laser-excited nonequilibrium electrons across polycrystalline and single-crystalline gold films has been investigated through time-of-flight measurements. The thicknesses of the films range from 25 to 400 nm. Ballistic electrons as well as electrons interacting with other electrons and/or with the lattice have been observed. The ballistic component dominates the transport in the thinner films, whereas the interactive transport mechanism is dominant at the upper end of the thickness range. A slower effective velocity of the interactive component is observed in the polycrystalline samples, and is assumed to arise from the presence of grain boundaries. The reflection coefficient of …

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Paschen's Law For A Hollow Cathode Discharge, H. Eichhorn, K. H. Schoenbach, T. Tessnow Jan 1993

Paschen's Law For A Hollow Cathode Discharge, H. Eichhorn, K. H. Schoenbach, T. Tessnow

Bioelectrics Publications

An expression for the breakdown voltage of a one‐dimensional hollow cathode discharge has been derived. The breakdown condition which corresponds to Paschen’s law contains, in addition to the first Townsend coefficient, and the secondary electron emission coefficient two parameters which characterize the reflecting action of the electric field and the lifetime of the electrons in the discharge. The breakdown voltage for a hollow cathode discharge in helium was calculated and compared to that of a glow discharge operating under similar conditions.

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Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen Jan 1993

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen

Bioelectrics Publications

The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …

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Effect Of Fluctuations On Lower Hybrid Power Deposition And Hard X-Ray Detection, George Vahala, Linda L. Vahala, Paul T. Bonoli Jan 1992

Effect Of Fluctuations On Lower Hybrid Power Deposition And Hard X-Ray Detection, George Vahala, Linda L. Vahala, Paul T. Bonoli

Electrical & Computer Engineering Faculty Publications

The hard X-ray intensity radial profiles from lower hybrid current drive experiments are interpreted as being correlated with fluctuations in the bulk plasma. This view seems to be dictated by comparing the hard X-ray data for various n║ with the Monte Carlo solutions of the lower hybrid wave energy deposition on plasma electrons. Information on internal magnetic fluctuations may, under certain conditions, be unfolded from a n║ scan of the hard X-ray profiles.

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Electric Field Induced Emission As A Diagnostic Tool For Measurement Of Local Electric Field Strengths, A. N. Dharamsi, K. H. Schoenbach Jan 1991

Electric Field Induced Emission As A Diagnostic Tool For Measurement Of Local Electric Field Strengths, A. N. Dharamsi, K. H. Schoenbach

Bioelectrics Publications

The phenomenon of electric field induced (EFI) emission is examined in several diatomic and polyatomic molecules. The possibility of using this phenomenon as a diagnostic tool to measure, nonintrusively, the strength and direction of local electric fields in plasmas is discussed. An estimate of the EFI signal emitted in a typical application plasma is given. This yields a lower bound on the detector sensitivity necessary to exploit EFI emission in practical applications. It is concluded that, at present, the EFI signal could be measured by some very sensitive infrared detection schemes available. Current progress in infrared detector technology, if maintained, …

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Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola Jan 1990

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

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Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz Jan 1990

Measurement Of Magnetic Fluctuations By O-X Mode Conversion, L. L. Vahala, G. Vahala, N. Bretz

Electrical & Computer Engineering Faculty Publications

The possibility of measuring magnetic fluctuations in a fusion plasma is considered by examining the O→X mode conversion. Under certain conditions and with good angular resolution, this mode conversion can be attributed to the presence of magnetic fluctuations even though the level of these fluctuations is much lower than that of density fluctuations. Some nonideal effects such as mode polarization mismatch at the plasma edge are also discussed.

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Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko Jan 1989

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

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Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern Jan 1989

Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern

Electrical & Computer Engineering Faculty Publications

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm2 were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

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An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko Jan 1988

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.

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Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala Jan 1987

Comment On "Orientation, Alignment, And Hyperfine Effects On Dissociation Of Diatomic Molecules To Open Shell Atoms", Mark D. Havey, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

A recent paper in this journal [Y. B. Band e t a l., J. Chem. Phys. 8 4, 3762 (1986)] reported parameters describing orientation and alignment produced, in an axial recoil limit, by one photondissociation of diatomic molecules. Reported also were values, applicable to the resonance transitions of the alkali atoms, for orientation and alignment depolarization coefficients. Most of the numerical values reported for the coefficients were incorrect, in some cases by as much as a factor of 2. We report a tabulation of correct depolarization coefficients applicable to the resonance transitions of common alkali isotopes. Further, the coefficients …

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High Resolution Laser Absorption Spectroscopy Of Ozone Near 1129.4 Cm-1, Lawrence N. Majorana Dec 1980

High Resolution Laser Absorption Spectroscopy Of Ozone Near 1129.4 Cm-1, Lawrence N. Majorana

Physics Theses & Dissertations

A Beer's Law experiment was performed with a tunable laser to determine self broadened line shape parameters of one infrared absorption ozone line in the v1 band for ten pressures from 0.26 to 6.29 Torr at 285K. SO2 line positions were used for wavelength calibration. Line shapes were iteratively fitted to the Voigt function at a Doppler width of 29.54 MHz (HWHM) resulting in values for the integrated line• strength, ( S), of (0.144 +/- 0.007 ) x ·10-20 cm-1/molecule cm-2, line center frequency, (υο) of 1129.426 cm-1 and the Lorentzian contributions to half width, (α …

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Stable Equilibrium Statistical States For Spheromaks, George Vahala, Linda L. Vahala Jan 1979

Stable Equilibrium Statistical States For Spheromaks, George Vahala, Linda L. Vahala

Electrical & Computer Engineering Faculty Publications

Incompressible nondissipative magnetohydrodynamic turbulence is treated for spherical systems. From the absolute equilibrium expectation values of the fields one can investigate those initially quiescent states for which no large mean square velocity will develop. This stable state is force-free and gives rise to the Hill vortex structure for the magnetic flux surfaces.

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