Open Access. Powered by Scholars. Published by Universities.®

Physics Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 7 of 7

Full-Text Articles in Physics

Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam Apr 2024

Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam

Electronic Thesis and Dissertation Repository

The advancement of semiconductor materials has played a crucial role in driving positive technological breakthroughs that impact humanity in numerous ways. The presence of defects significantly alters the physical properties of semiconductors, making their analysis essential in the fabrication of semiconductor devices. I presented a new method to quantify surface and near-surface defects in single crystal semiconductors. Epitaxially-grown silicon was measured by low energy electron diffraction (LEED) to obtain the surface Debye temperature (θD). The results showed the surface θD of bulk Si (001), 1.0 μm, and 0.6 μm Si on sapphire of 333 K, 299 K, …


Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov Jan 2024

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …


Synthesis, Characterization, And Simulation Of Two-Dimensional Materials, Lawrence Hudy Aug 2023

Synthesis, Characterization, And Simulation Of Two-Dimensional Materials, Lawrence Hudy

Theses and Dissertations

ABSTRACT

SYNTHESIS, CHARACTERIZATION, AND SIMULATION OF TWO-DIMENSIONAL MATERIALS

by

Lawrence Hudy

The University of Wisconsin-Milwaukee, 2023Under the Supervision of Professor Michael Weinert

This dissertation focuses on my journey through many aspects of surface science leading to the first principles investigation of transition metal dichalcogenides studying the impact of defects, twist, and decreasing interlayer separation to probe their effect on the electronic properties of these materials. My journey started out learning many aspects of material science such as methods for material synthesis and characterization but later ended on simulation of material properties using density functional theory. In the first experiments, we …


In Situ Study Of Ultrafast Carrier Transport Dynamics In Perovskite Thin-Films, Kanishka Kobbekaduwa Aug 2022

In Situ Study Of Ultrafast Carrier Transport Dynamics In Perovskite Thin-Films, Kanishka Kobbekaduwa

All Dissertations

Perovskites are a novel class of materials that have piqued the interest of researchers in photovoltaics, photodetectors, and optoelectronics. In this study, we measure and elucidate in situ ultrafast carrier dynamics in both organic and inorganic, lead, and non-lead-based halide perovskite thin films using ultrafast photocurrent spectroscopy (UPCS) with a sub-25 ps time resolution. The UPCS technique enables us to define carrier transport dynamics in spatial, temporal, and energy landscapes via measurements at different electric fields, laser intensities, and temperatures. Here we explore and analyze solution-processed bulk MAPbI3 and nanocrystalline CsPbI3-based devices and novel non-lead double-layered perovskite …


Optical Studies Of Wide Bandgap Photonic Materials, Nikesh Maharjan Jun 2022

Optical Studies Of Wide Bandgap Photonic Materials, Nikesh Maharjan

Dissertations, Theses, and Capstone Projects

In this dissertation work, optical properties of wide bandgap materials such as hexagonal Boron Nitride (h-BN) and Zinc Oxide (ZnO) have been studied. Deep UV photoluminescence spectroscopy was employed to study the optical properties of bulk h-BN and powder crystals using a laser of wavelength 200 nm, which is the fourth harmonic of Ti:Sapphire laser as excitation source. The properties and chemical compositions of annealed and unannealed bulk h-BN were investigated. The PL spectra from h-BN samples annealed at 900 ºC in ambient air, had strong phonon assisted band edge emissions along with a sharp atomic-like emission line at 4.09 …


Defect-Related Magnetic Properties Of Nanostructured Nickel Oxide Thin Films For Solar Cell Applications, Angela E. Ezugwu Jun 2018

Defect-Related Magnetic Properties Of Nanostructured Nickel Oxide Thin Films For Solar Cell Applications, Angela E. Ezugwu

Electronic Thesis and Dissertation Repository

Transparent conducting oxides (TCOs) are extensively investigated because of their applications as transparent electrodes in solar cells and light-emitting devices. TCOs of interest include indium-tin oxide, aluminum-doped zinc oxide, nickel oxide (NiO), and their combinations. There is strong interest in NiO because no heteroatoms are required to “dope” it at high transparency levels. It has been speculated that paramagnetic defects due to Ni3+ centers and O interstitials are responsible for the electrical conductivity of otherwise insulating and antiferromagnetic NiO, but direct investigation of such defects has been limited. Here, the electrical conductivity in nanostructured NiO thin films is investigated …


Influence Of Quantum Dot Structure On The Optical Properties Of Group Iv Materials Fabricated By Ion Implantation, Eric G. Barbagiovanni Sep 2012

Influence Of Quantum Dot Structure On The Optical Properties Of Group Iv Materials Fabricated By Ion Implantation, Eric G. Barbagiovanni

Electronic Thesis and Dissertation Repository

In nanostructures (NSs), to acquire a fundamental understanding of the electronic states by studying the optical properties is inherently complicated. A widely used simplification to this problem comes about by developing a model for a small scale representation of types of NSs and applying it to a hierarchy of fabrication methods. However, this methodology fails to account for structural differences incurred by the fabrication method that lead to differences in the optical properties. Proper modelling is realized by first considering the proper range of experimental parameters individually as inputs to a theoretical model and applying the correct parameters to the …