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Full-Text Articles in Physics
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Polarization Properties Of Maxwell-Gauss Laser Beams, Jessica Patricia Conry
Polarization Properties Of Maxwell-Gauss Laser Beams, Jessica Patricia Conry
Graduate Theses and Dissertations
Laser beams are wave-like optical disturbances. They are characterized by a dominant direction of propagation and a finite extent transverse to the direction of propagation. Many characteristics of laser beams can be described in terms of a scalar function multiplied by a constant vector, which can be real (for linear polarization) or complex (for elliptical polarization). The scalar function is a solution to the paraxial scalar wave equation. This scalar description, however, fails to describe the polarization and focusing characteristics of laser beams correctly. For a correct accounting of these characteristics, the electric and magnetic fields associated with laser beams …
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride
Master's Theses
Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …