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Atomic, Molecular and Optical Physics

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2011

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Articles 31 - 41 of 41

Full-Text Articles in Physics

Ultrafast Rempi In Benzene And The Monohalobenzenes Without The Focal Volume Effect, Timothy D. Scarborough, James Strohaber, David B. Foote, Collin J. Mcacy, Cornelis J. Uiterwaal Jan 2011

Ultrafast Rempi In Benzene And The Monohalobenzenes Without The Focal Volume Effect, Timothy D. Scarborough, James Strohaber, David B. Foote, Collin J. Mcacy, Cornelis J. Uiterwaal

C.J.G.J. Uiterwaal Publications

We report on the photoionization and photofragmentation of benzene (C6H6) and of the monohalobenzenes C6H5–X (X = F, Cl, Br, I) under intense-field, single-molecule conditions. We focus 50-fs, 804-nm pulses from a Ti:sapphire laser source, and record ion mass spectra as a function of intensity in the range ~1013 W/cm2 to ~1015 W/cm2. We count ions that were created in the central, most intense part of the focal area; ions from other regions are rejected. For all targets, stable parent ions (C6H5X+) are …

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Metastability Of Free Cobalt And Iron Clusters: A Possible Precursor To Bulk Ferromagnetism, Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. De Heer Jan 2011

Metastability Of Free Cobalt And Iron Clusters: A Possible Precursor To Bulk Ferromagnetism, Xiaoshan Xu, Shuangye Yin, Ramiro Moro, Anthony Liang, John Bowlan, Walt A. De Heer

Xiaoshan Xu Papers

Homonuclear cobalt and iron clusters CoN and FeN measured in a cryogenic molecular beam exist in two states with distinct magnetic moments (μ), polarizabilities, and ionization potentials, indicating distinct valences. The μ is approximately quantized: μN ~ 2NμB in the ground states and μN* ~ NμB in the excited states for Co; μN ~ 3N μB and μN * ~ NμB for Fe. At a large size, the average μ of the two states converges to the bulk value with diminishing ionization potential differences. …

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Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S. -H. Cheng, C. Herding, J. Zhu Jan 2011

Colossal Negative Magnetoresistance In Dilute Fluorinated Graphene, X. Hong, S. -H. Cheng, C. Herding, J. Zhu

Xia Hong Publications

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by …

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Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben Jan 2011

Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben

Peter Dowben Publications

The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.

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Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben Jan 2011

Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben

Peter Dowben Publications

The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.

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Mesoscale Flux-Closure Domain Formation In Single-Crystal Batio3, R. G.P. Mcquaid, L. J. Mcgilly, Pankaj Sharma, Alexei Gruverman, J. M. Gregg Jan 2011

Mesoscale Flux-Closure Domain Formation In Single-Crystal Batio3, R. G.P. Mcquaid, L. J. Mcgilly, Pankaj Sharma, Alexei Gruverman, J. M. Gregg

Alexei Gruverman Publications

Over 60 years ago, Charles Kittel predicted that quadrant domains should spontaneously form in small ferromagnetic platelets. He expected that the direction of magnetization within each quadrant should lie parallel to the platelet surface, minimizing demagnetizing fields, and that magnetic moments should be configured into an overall closed loop, or flux-closure arrangement. Although now a ubiquitous observation in ferromagnets, obvious flux-closure patterns have been somewhat elusive in ferroelectric materials. This is despite the analogous behaviour between these two ferroic subgroups and the recent prediction of dipole closure states by atomistic simulations research. Here we show Piezoresponse Force Microscopy images of …

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In Vitro Analysis Of Immersed Human Tissues By Raman Microspectroscopy, Franck Bonnier, A. Mehmood, Peter Knief, Aidan Meade, Helen Lambkin, Kathleen Flynn, V. Mcdonagh, C. Healy, T. C. Lee, Fiona Lyng, Hugh Byrne Jan 2011

In Vitro Analysis Of Immersed Human Tissues By Raman Microspectroscopy, Franck Bonnier, A. Mehmood, Peter Knief, Aidan Meade, Helen Lambkin, Kathleen Flynn, V. Mcdonagh, C. Healy, T. C. Lee, Fiona Lyng, Hugh Byrne

Articles

Raman microspectroscopy is a powerful tool for the analysis of tissue sections, providing a molecular map of the investigated samples. Nevertheless, data pre-processing and, particularly, the removal of the broad background to the spectra remain problematic. Indeed, the physical origin of the background has not been satisfactorily determined. Using 785 nm as source in a confocal geometry, it is demonstrated for the example of the protein kappa-elastin that the background and resulting quality of the recorded spectrum are dependent on the morphology of the sample. Whereas a fine powder yields a dominant broad background, compressed pellets and solution-cast thin films …

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Heat Recovery Mechanism In The Excitation Of Radiative Polaritons By Broadband Infrared Radiation In Thin Oxide Films, Anita J. Vincent-Johnson, Kyle A. Vasquez, John E. Bridstrup, Andrew E. Masters, Xiaofeng Hu, Giovanna Scarel Jan 2011

Heat Recovery Mechanism In The Excitation Of Radiative Polaritons By Broadband Infrared Radiation In Thin Oxide Films, Anita J. Vincent-Johnson, Kyle A. Vasquez, John E. Bridstrup, Andrew E. Masters, Xiaofeng Hu, Giovanna Scarel

Department of Physics and Astronomy - Faculty Scholarship

This work probes radiative polaritons in thin oxide layers as a mean to capture and absorb broadband infrared radiation and transform it into heat. A heat recovery mechanism, based on the Seebeck effect, is used as the tool of the investigation. Heat production challenges the current understanding which views the excitation of radiative polaritons as only accompanied by the emission of electromagnetic radiation. The heat recovery mechanism presented here can inspire the design of infrared energy harvesting devices, similar to photovoltaic cells, and other devices to convert energy from a wide range of the electromagnetic radiation spectrum using thermoelectric power …

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Low Temperature Epitaxial Growth Of Ge Quantum Dot On Si (100) - (2×1) By Femtosecond Laser Excitation, Ali Oguz Er, Wei Ren, Hani E. Elsayed-Ali Jan 2011

Low Temperature Epitaxial Growth Of Ge Quantum Dot On Si (100) - (2×1) By Femtosecond Laser Excitation, Ali Oguz Er, Wei Ren, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Low temperature epitaxy of Ge quantum dots on Si (100) - (2×1) by femtosecond pulsed laser deposition under femtosecond laser excitation was investigated. Reflection high-energy electron diffraction and atomic force microscopy were used to analyze the growth mode and morphology. Epitaxial growth was achieved at ∼70 °C by using femtosecond laser excitation of the substrate. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed. © 2011 American Institute of Physics. [doi:10.1063/1.3537813]

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Photoassociative Spectroscopy Of Ultracold Metastable Argon, M. K. Shaffer, G. Ranjit, C. I. Sukenik, M. Walhout Jan 2011

Photoassociative Spectroscopy Of Ultracold Metastable Argon, M. K. Shaffer, G. Ranjit, C. I. Sukenik, M. Walhout

Physics Faculty Publications

We present results of photoassociative spectroscopy performed on ultracold metastable argonatoms in a magneto-optical trap. Ion spectra are obtained with laser detuning up to a few gigahertz below the 4s[3/2]2 → 4p[5/2]3 trapping transition at 811 nm and with intensities in a range of ~(102-105)ISat. We also compute dipole-dipole potentials for both singly and doubly excited diatomic molecules and use a Leroy-Bernstein analysis to determine the approximate vibrational spacings in the (s+p) and (p+p) manifolds. Based on this theoretical framework, we explain a broad background feature in our data and suggest that …

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Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2011

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …

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