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Investigation Of Electrical And Optical Properties Of Bulk Iii-V Ternary Semiconductors, Travis C. Gomez
Investigation Of Electrical And Optical Properties Of Bulk Iii-V Ternary Semiconductors, Travis C. Gomez
Theses and Dissertations
Bulk grown III-V ternary semiconductors of In0.08Ga0.92Sb and In0.15Ga0.85As were investigated through Hall-effect and photoluminescence measurements to determine carrier concentration, mobility, sheet resistivity, and luminescence spectrum. In the past, epitaxial layers of ternary compounds have been grown on binary compound substrates, and thus very limited lattice matched ternary alloys were available. Recently, bulk grown ternary substrates have been developed, and it has presented a renewed interest in using these substrates to grow high quality ternary compounds for use in many next generation optoelectronic devices. The results of photoluminescence (PL) study for the …