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Full-Text Articles in Nanoscience and Nanotechnology
Zirconium Diboride, Hexagonal Boron Nitride, And Amorphous Alumina Thin Films For High Temperature Applications, David Murdock Stewart
Zirconium Diboride, Hexagonal Boron Nitride, And Amorphous Alumina Thin Films For High Temperature Applications, David Murdock Stewart
Electronic Theses and Dissertations
The use of microelectronic sensors and actuators in harsh, high temperature environments, such as power plants, turbine engines, and industrial manufacturing, could greatly improve the safety, reliability, and energy efficiency of these processes. The primary challenge in implementing this technology is the breakdown and degradation of thin films used in fabricating these devices when exposed to high temperatures >800 °C and oxidizing atmospheres. Zirconium diboride, hexagonal boron nitride, and amorphous alumina are candidate materials for use as thin film sensor components due to their high melting temperatures and stable phases. Zirconium diboride thin films have metallic-like electrical conductivity and remain …
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …