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Full-Text Articles in Nanoscience and Nanotechnology
Zirconium Diboride, Hexagonal Boron Nitride, And Amorphous Alumina Thin Films For High Temperature Applications, David Murdock Stewart
Zirconium Diboride, Hexagonal Boron Nitride, And Amorphous Alumina Thin Films For High Temperature Applications, David Murdock Stewart
Electronic Theses and Dissertations
The use of microelectronic sensors and actuators in harsh, high temperature environments, such as power plants, turbine engines, and industrial manufacturing, could greatly improve the safety, reliability, and energy efficiency of these processes. The primary challenge in implementing this technology is the breakdown and degradation of thin films used in fabricating these devices when exposed to high temperatures >800 °C and oxidizing atmospheres. Zirconium diboride, hexagonal boron nitride, and amorphous alumina are candidate materials for use as thin film sensor components due to their high melting temperatures and stable phases. Zirconium diboride thin films have metallic-like electrical conductivity and remain …
New Approach Of Modifying The Anatase To Rutile Transition Temperature In Tio2 Photocatalysts, Ciara Byrne, Rachel Fagan, Steven Hinder, Declan Mccormack, Suresh Pillai
New Approach Of Modifying The Anatase To Rutile Transition Temperature In Tio2 Photocatalysts, Ciara Byrne, Rachel Fagan, Steven Hinder, Declan Mccormack, Suresh Pillai
Articles
In pure synthetic titanium dioxide, the anatase to rutile phase transition usually occurs between the temperatures of 600 °C and 700 °C. The phase transition temperature can be altered by various methods, including modifying the precursor or by adding dopant or modifier to the TiO2 sample. In an attempt to investigate the phase transition using aromatic carboxylic acids, the current study examines the impact of increasing concentrations of benzoic acid (1 : 0, 1 : 1, 1 : 4 and 1 : 8 molar ratio TiO2 : benzoic acid) on anatase to rutile transition. The samples were characterised using Raman …
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …
Influence Of Reaction With Xef2 On Surface Adhesion Of Al And Al2o3 Surfaces, Tianfu Zhang, Jeong Park, Wenyu Huang, Gabor A. Somoraji
Influence Of Reaction With Xef2 On Surface Adhesion Of Al And Al2o3 Surfaces, Tianfu Zhang, Jeong Park, Wenyu Huang, Gabor A. Somoraji
Wenyu Huang
The change in surfaceadhesion after fluorination of Al and Al2O3surfaces using XeF2 was investigated with atomic force microscopy. The chemical interaction between XeF2 and Al and Al2O3surfaces was studied by in situx-ray photoelectron spectroscopy. Fresh Al and Al2O3surfaces were obtained by etching top silicon layers of Si∕Al and Si∕Al2O3 with XeF2. The surfaceadhesion and chemical composition were measured after the exposure to air or annealing (at 200°C under vacuum). The correlation between the adhesion force increase and presence of AlF3 on the surface was revealed.