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Full-Text Articles in Nanoscience and Nanotechnology
Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam
Laser Direct Written Silicon Nanowires For Electronic And Sensing Applications, Woongsik Nam
Open Access Dissertations
Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, …
Spectroscopy Of A Deterministic Single-Donor Device In Silicon, M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, M. Y. Simmons
Spectroscopy Of A Deterministic Single-Donor Device In Silicon, M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, M. Y. Simmons
Birck and NCN Publications
We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an epitaxial silicon environment. Using scanning tunneling microscope (STM) hydrogen lithography, the single impurity is deterministically placed with a spatial accuracy of ±1 lattice site within a donor-based transport device. Low temperature transport measurements confirm the presence of the single donor and show that the donor charge state can be precisely controlled via gate voltages. We observe a charging energy that is remarkably similar to the value expected for isolated P donors in bulk silicon, which is in sharp contrast to previous experiments on single-dopant …
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems
The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs.