Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Nanoscience and Nanotechnology
Plasmon Enhanced Quantum Properties Of Single Photon Emitters With Hybrid Hexagonal Boron Nitride Silver Nanocube Systems, Mohammadjavad Dowran, Andrew Butler, Suvechhya Lamichhane, Adam Erickson, Ufuk Kilic, Sy_Hwang Liou, Christos Argyropoulos, A. Laraoui
Plasmon Enhanced Quantum Properties Of Single Photon Emitters With Hybrid Hexagonal Boron Nitride Silver Nanocube Systems, Mohammadjavad Dowran, Andrew Butler, Suvechhya Lamichhane, Adam Erickson, Ufuk Kilic, Sy_Hwang Liou, Christos Argyropoulos, A. Laraoui
Department of Mechanical and Materials Engineering: Faculty Publications
Hexagonal boron nitride (hBN) has emerged as a promising ultrathin host of single photon emitters (SPEs) with favorable quantum properties at room temperature, making it a highly desirable element for integrated quantum photonic networks. One major challenge of using these SPEs in such applications is their low quantum efficiency. Recent studies have reported an improvement in quantum efficiency by up to two orders of magnitude when integrating an ensemble of emitters such as boron vacancy defects in multilayered hBN flakes embedded within metallic nanocavities. However, these experiments have not been extended to SPEs and are mainly focused on multiphoton effects. …
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami
Physics & Astronomy ETDs
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …