Open Access. Powered by Scholars. Published by Universities.®

Nanoscience and Nanotechnology Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 2 of 2

Full-Text Articles in Nanoscience and Nanotechnology

Block Copolymer Nanostructures For Inorganic Oxide Nanopatterning, Krishna Pandey Dec 2017

Block Copolymer Nanostructures For Inorganic Oxide Nanopatterning, Krishna Pandey

MSU Graduate Theses

Self-assembled nature of block copolymer (BCP) makes them ideal for emerging technologies in nanometer scale. The micro phase separation between two or more dissimilar polymer blocks of BCP leads to uniform periodic nanostructures of different domains of dimension in the range of 5-100 nm, good for the development of emerging microelectronic and optoelectronics devices. Molecular weight and chain architecture of each blocks govern the morphology evolution; gives different structure like spherical, micelles, lamellae, cylindrical, gyroid etc. The morphology evolution of BCP nanostructure also depends on different external factors as well. In the first work of this thesis, three external factors …


Novel Uses Of Directly Patternable Silicon Oxide Based Resist For Advanced Patterning Applications, Vishal Umeshbhai Desai Jan 2017

Novel Uses Of Directly Patternable Silicon Oxide Based Resist For Advanced Patterning Applications, Vishal Umeshbhai Desai

Legacy Theses & Dissertations (2009 - 2024)

Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in …