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Full-Text Articles in Nanoscience and Nanotechnology
Growth Of Small Particles In Nonequilibrium Plasmas, Necip Berker Üner
Growth Of Small Particles In Nonequilibrium Plasmas, Necip Berker Üner
McKelvey School of Engineering Theses & Dissertations
Nonequilibrium plasma (NEP) is an extraordinary environment for material synthesis. NEP is comprised of hot electrons with temperatures greater than 10000 K and of cold ions and neutrals that are usually at few hundred kelvins above room temperature. Due to this large difference in species’ temperatures, the assumption of local thermal equilibrium does not hold in NEP. Therefore, NEP can act as a unique processor of mass, and it can transform materials along pathways that are not accessible by methods wherein local thermal equilibrium is valid. For decades, NEPs have been employed in the semiconductor industry to manufacture many thin …
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman
Donald Heiman
Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. P. Bennett, L. Menon, D. Heiman
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. P. Bennett, L. Menon, D. Heiman
Latika Menon
Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Quantum Dot Resonant Tunneling Diode For Telecommunication Wavelength Single Photon Detection, H. W. Li, B. E. Kardynał, P. See, A. J. Shields, P. Simmonds, H. E. Beere, D. A. Ritchie
Paul J. Simmonds
The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58 × 10−6 ns−1 for 1310 nm photons.
Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie
Growth By Molecular Beam Epitaxy Of Self-Assembled Inas Quantum Dots On Inalas And Ingaas Lattice-Matched To Inp, Paul J. Simmonds, H W. Li, H E. Beere, P See, A J. Shields, D A. Ritchie
Paul J. Simmonds
The authors report the results of a detailed study of the effect of growth conditions, for molecular beam epitaxy, on the structural and optical properties of self-assembled InAs quantum dots (QDs) on In0.524Al0.476As. InAs QDs both buried in, and on top of, In0.524Al0.476As were analyzed using photoluminescence (PL) and atomic force microscopy. InAs QD morphology and peak PL emission wavelength both scale linearly with deposition thickness in monolayers (MLs). InAs deposition thickness can be used to tune QD PL wavelength by 170 nm/ML, over a range of almost 700 nm. Increasing growth …