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Full-Text Articles in Nanoscience and Nanotechnology
Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob
Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob
Legacy Theses & Dissertations (2009 - 2024)
The research work presented in this Ph.D. thesis focuses on the engineering of AlGaN/GaN high electron mobility transistors (HEMTs) for the development of future device technology in power electronic and sensing applications.
Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer
Legacy Theses & Dissertations (2009 - 2024)
Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation.
Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich
Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Legacy Theses & Dissertations (2009 - 2024)
Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and …
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Legacy Theses & Dissertations (2009 - 2024)
Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …