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Articles 1 - 6 of 6
Full-Text Articles in Nanoscience and Nanotechnology
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Legacy Theses & Dissertations (2009 - 2024)
The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore’s Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. …
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Legacy Theses & Dissertations (2009 - 2024)
Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a …
Hexagonal Boron Nitride : Ubiquitous Layered Dielectric For Two-Dimensional Electronics, Nikhil Jain
Hexagonal Boron Nitride : Ubiquitous Layered Dielectric For Two-Dimensional Electronics, Nikhil Jain
Legacy Theses & Dissertations (2009 - 2024)
Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in “3D graphene” superlattice. First, CVD-grown graphene on h-BN substrate …
Transparent Actuator Made With Few Layer Graphene Electrode And Dielectric Elastomer, For Variable Focus Lens, Taeseon Hwang, Hyeok-Yong Kwon, Joon-Suk Oh, Jung-Pyo Hong, Seung-Chul Hong, Youngkwan Lee, Hyouk Ryeo Choi, Kwang J. Kim, Mainul Hossain Bhuiya, Jae Do Nam
Transparent Actuator Made With Few Layer Graphene Electrode And Dielectric Elastomer, For Variable Focus Lens, Taeseon Hwang, Hyeok-Yong Kwon, Joon-Suk Oh, Jung-Pyo Hong, Seung-Chul Hong, Youngkwan Lee, Hyouk Ryeo Choi, Kwang J. Kim, Mainul Hossain Bhuiya, Jae Do Nam
Mechanical Engineering Faculty Research
A transparent dielectric elastomer actuator driven by few-layer-graphene (FLG) electrode was experimentally investigated. The electrodes were made of graphene, which was dispersed inN-methyl-pyrrolidone. The transparent actuator was fabricated from developed FLG electrodes.The FLG electrode with its sheet resistance of 0.45 kΩ/sq (80 nm thick) was implemented to mask silicone elastomer. The developed FLG-driven actuator exhibited an optical transparency of over 57% at a wavenumber of 600 nm and produced bending displacement performance ranging from 29 to 946 μm as functions of frequency and voltage. The focus variation was clearly demonstrated under actuation to study its application-feasibility in …
Study Of The Dielectric Function Of Graphene From Spectroscopic Ellipsometry And Electron Energy Loss Spectroscopy, Florence Joan Nelson
Study Of The Dielectric Function Of Graphene From Spectroscopic Ellipsometry And Electron Energy Loss Spectroscopy, Florence Joan Nelson
Legacy Theses & Dissertations (2009 - 2024)
For more than 60 years, semiconductor research has been advancing up the periodic table. The first transistor was made from germanium. This later gave way to silicon-based devices due to the latter's ability to form an excellent interface with thermally-grown oxide. Now for the last ~8 years, the focus has moved up one more row to carbon for post-CMOS devices in order to comply with the scaling limitations of Moore's law. However, for each of these, the measurements of film properties and dimensions have always been required for technological applications. These measurement methods often incorporate the use of light or …
On The Effect Of Hydrodynamic Slip On The Polarization Of A Nonconducting Spherical Particle In An Alternating Electric Field, Hui Zhao
Mechanical Engineering Faculty Research
The polarization of a charged, dielectric, spherical particle with a hydrodynamically slipping surface under the influence of a uniform alternating electric field is studied by solving the standard model (the Poisson–Nernst–Planck equations). The dipole moment characterizing the strength of the polarization is computed as a function of the double layer thickness, the electric field frequency, the particle’s surface charge, and the slip length. Our studies reveal that two processes contribute to the dipole moment: ion transport inside the double layer driven by the electric field and the particle’s electrophoretic motion. The hydrodynamic slip will simultaneously impact both processes. In the …