Open Access. Powered by Scholars. Published by Universities.®

Nanoscience and Nanotechnology Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 7 of 7

Full-Text Articles in Nanoscience and Nanotechnology

Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman Oct 2012

Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman

Donald Heiman

Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.


Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. P. Bennett, L. Menon, D. Heiman Oct 2012

Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. P. Bennett, L. Menon, D. Heiman

Latika Menon

Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.


High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar Apr 2012

High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar

Srinivas Sridhar

The authors demonstrate a nanofabrication method utilizing nanoporous alumina templates which involves directed three dimensional assembly of nanoparticles inside the pores by means of an electrophoretic technique. In their demonstration, they have assembled polystyrene nanobeads with diameter of 50 nm inside nanopore arrays of height of 250 nm and diameter of 80 nm. Such a technique is particularly useful for large-scale, rapid assembly of nanoelements for potential device applications.


Measurement Of Electron Spin Transport In Graphene On 6h-Silicon Carbide(0001), Joseph Abel Jan 2012

Measurement Of Electron Spin Transport In Graphene On 6h-Silicon Carbide(0001), Joseph Abel

Legacy Theses & Dissertations (2009 - 2024)

The focus of this thesis is to demonstrate the potential of wafer scale graphene spintronics. Graphene is a single atomic layer of sp2-bonded carbon atoms that has high carrier mobilities, making it a desirable material for future nanoscale electronic devices. The vision of spintronics is to utilize the spin of the electron to produce novel high-speed low power consuming devices. Materials with long spin relaxation times and spin diffusion lengths are needed to realize these goals. Graphene is an ideal material as it meets these requirements and is amenable to planar device geometries.


The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson Jan 2012

The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson

Legacy Theses & Dissertations (2009 - 2024)

This dissertation is focused on determining the influence of the copper substrate on graphene grown by \ac{CVD}. Graphene, which can be grown in single atomic layers on copper substrates, has potential applications in future electronic devices. One of the key issues for the use of graphene grown by chemical vapor deposition for device applications is the influence of defects on the transport properties of the graphene. For instance, growth on metal foil substrates results in multi-domain graphene growth because the foil substrates themselves have a variety of different surface terminations. Therefore, they don't serve as a very good template for …


Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman Jan 2012

Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman

Legacy Theses & Dissertations (2009 - 2024)

The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …


Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat Jan 2012

Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat

Legacy Theses & Dissertations (2009 - 2024)

The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.