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Alumina; atomic layer deposition; dislocations; gallium arsenide; III-V semiconductors; MOCVD coatings; MOSFET; semiconductor epitaxial layers; semiconductor-insulator boundaries; surface conductivity
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Full-Text Articles in Nanoscience and Nanotechnology
Atomic-Layer-Deposited Al2o3/Gaas Metal-Oxide-Semiconductor Field-Effect Transistor On Si Substrate Using Aspect Ratio Trapping Technique, Y Q. Wu, M Xu, P. D. Ye, Z Cheng, J Li, J Park, J Hydrick, J Bai, M Carroll, J G. Fiorenza, A Lochtefeld
Atomic-Layer-Deposited Al2o3/Gaas Metal-Oxide-Semiconductor Field-Effect Transistor On Si Substrate Using Aspect Ratio Trapping Technique, Y Q. Wu, M Xu, P. D. Ye, Z Cheng, J Li, J Park, J Hydrick, J Bai, M Carroll, J G. Fiorenza, A Lochtefeld
Birck and NCN Publications
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) is demonstrated on a n-doped GaAs channel with atomic-layer deposited Al2O3 as the gate oxide. The 10 mu m gate length transistor has a maximum drain current of 88 mA/mm and a transconductance of 19 mS/mm. The surface mobility estimated from the accumulation drain current has a peak value of similar to 500 cm(2)/Vs, which is …