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Scanning electron microscopes

Legacy Theses & Dissertations (2009 - 2024)

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Charged Particle Imaging Methods For Cd Metrology Of Sub 22nm 3d Device Structures, Aron Joel Cepler Jan 2013

Charged Particle Imaging Methods For Cd Metrology Of Sub 22nm 3d Device Structures, Aron Joel Cepler

Legacy Theses & Dissertations (2009 - 2024)

Critical dimension scanning electron microscopes (CD-SEMs) are used to perform highly accurate dimensional metrology on patterned features. In order to ensure optimal feedback for process control, it is necessary that these tools produce highly reproducible measurements. As the smallest device features continue to shrink, and new challenging high aspect ratio (HAR) structures are being introduced, gaps are appearing between process control measurements that are necessary for high volume manufacturing and the capabilities of the CD-SEM. Two possible routes for solving this problem include improvement of the existing CD-SEM technology or the replacement of the CD-SEM.