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Full-Text Articles in Nanoscience and Nanotechnology
Modeling Secondary Electron Trajectories In Scanning Electron Microscopes, Kevin Mcnamara, Joshua Miller
Modeling Secondary Electron Trajectories In Scanning Electron Microscopes, Kevin Mcnamara, Joshua Miller
Nanoscale Science & Engineering (discontinued with class year 2014)
The efficiency of secondary electron collection by a scanning electron microscope detector is not generally known, particularly as the electric field on the detector is varied. It is often assumed that the detector collects almost all of the secondary electrons emitted from the sample. This works seeks to better understand the mechanism of secondary electron collection by the detector in order to optimize collection efficiency. The benefit of collecting more secondary electrons is the enhancement of the signal-to-noise ratio, which means better quality images can be obtained, allowing us to better understand the relationship between secondary electron images and the …
Modeling Secondary Electron Trajectories In Scanning Electron Microscopes, Joshua Miller, Kevin Mcnamara
Modeling Secondary Electron Trajectories In Scanning Electron Microscopes, Joshua Miller, Kevin Mcnamara
Nanoscale Science & Engineering (discontinued with class year 2014)
The efficiency of secondary electron collection by a scanning electron microscope detector is not generally known, particularly as the electric field on the detector is varied. It is often assumed that the detector collects almost all of the secondary electrons emitted from the sample. This works seeks to better understand the mechanism of secondary electron collection by the detector in order to optimize collection efficiency. The benefit of collecting more secondary electrons is the enhancement of the signal-to-noise ratio, which means better quality images can be obtained, allowing us to better understand the relationship between secondary electron images and the …
Charged Particle Imaging Methods For Cd Metrology Of Sub 22nm 3d Device Structures, Aron Joel Cepler
Charged Particle Imaging Methods For Cd Metrology Of Sub 22nm 3d Device Structures, Aron Joel Cepler
Legacy Theses & Dissertations (2009 - 2024)
Critical dimension scanning electron microscopes (CD-SEMs) are used to perform highly accurate dimensional metrology on patterned features. In order to ensure optimal feedback for process control, it is necessary that these tools produce highly reproducible measurements. As the smallest device features continue to shrink, and new challenging high aspect ratio (HAR) structures are being introduced, gaps are appearing between process control measurements that are necessary for high volume manufacturing and the capabilities of the CD-SEM. Two possible routes for solving this problem include improvement of the existing CD-SEM technology or the replacement of the CD-SEM.