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Full-Text Articles in Nanoscience and Nanotechnology

The Efficacy Of Programming Energy Controlled Switching In Resistive Random Access Memory (Rram), David Malien Nminibapiel Jul 2017

The Efficacy Of Programming Energy Controlled Switching In Resistive Random Access Memory (Rram), David Malien Nminibapiel

Electrical & Computer Engineering Theses & Disssertations

Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit. However, this approach is not sustainable because the charge-storage mechanism is reaching a fundamental scaling limit. Although stack engineering and 3D integration solutions can delay this limit, alternate strategies based on non-charge storage mechanisms for memory have been introduced and are being actively pursued.

Resistive Random Access Memory (RRAM) has emerged as one of the ...


Ultrafast Electron Diffraction Study Of The Dynamics Of Antimony Thin Films And Nanoparticles, Mahmoud Abdel-Fattah Jul 2011

Ultrafast Electron Diffraction Study Of The Dynamics Of Antimony Thin Films And Nanoparticles, Mahmoud Abdel-Fattah

Electrical & Computer Engineering Theses & Disssertations

The ultrafast fast phenomena that take place following the application of a 120 fs laser pulse on 20 nm antimony thin films and 40 nm nanoparticles were studied using time-resolved electron diffraction. Samples are prepared by thermal evaporation, at small thickness (< 10 nm) antimony nanoparticles form while at larger thicknesses we get continuous thin films.

The samples are annealed and studied by static heating to determine their Debye temperatures, which were considerably less than the standard value. The thermal expansion under static heating also yielded the expansion coefficient of the sample material. Nanoparticle samples gave a very accurate thermal expansion coefficient (11 × 10-6 K-1).

Ultrafast time resolved electron diffraction studies with ∼1 ...


Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily Apr 2011

Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily

Electrical & Computer Engineering Theses & Disssertations

Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an ...