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Full-Text Articles in Nanoscience and Nanotechnology
Shot Noise Thermometry For Thermal Characterization Of Templated Carbon Nanotubes, Robert A. Sayer, Sunkook Kim, Aaron D. Franklin, Saeed Mohammadi, Timothy Fisher
Shot Noise Thermometry For Thermal Characterization Of Templated Carbon Nanotubes, Robert A. Sayer, Sunkook Kim, Aaron D. Franklin, Saeed Mohammadi, Timothy Fisher
Robert A Sayer
A carbon nanotube (CNT) thermometer that operates on the principles of electrical shot noise is reported. Shot noise thermometry is a self-calibrating measurement technique that relates statistical fluctuations in dc current across a device to temperature. A structure consisting of vertical, top, and bottom-contacted single-walled carbon nanotubes in a porous anodic alumina template was fabricated and used to measure shot noise. Frequencies between 60 and 100 kHz were observed to preclude significant influence from 1/f noise, which does not contain thermally relevant information. Because isothermal models do not accurately reproduce the observed noise trends, a self-heating shot noise model has …
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy Fisher, David B. Janes
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy Fisher, David B. Janes
Robert A Sayer
The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs.
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
Toward Surround Gates On Vertical Single-Walled Carbon Nanotube Devices, Aaron D. Franklin, Robert A. Sayer, Timothy D. Sands, Timothy S. Fisher, David B. Janes
Robert A Sayer
The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs.