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Incorporation Of Zn In Gaas During Organometallic Vapor Phase Epitaxy Growth Compared To Equilibrium, W. Reichert, C.Y. Chen, W.M. Li, Jeffrey E. Shield, R.M. Cohen, D.S. Simons, P.H. Chi

Nebraska Center for Materials and Nanoscience: Faculty Publications

The zinc concentration measured after organometallic vapor phase epitaxy (GMVPE) growth on (100)-oriented GaAs at 700 °C has been compared to the zinc concentration measured after in-diffusion under near-equilibrium conditions. During diffusion, the concentration of Zn 20 nm below the surface was found to vary with P_Zn^1/2, as expected for bulk solid-vapor equilibrium. During growth, the concentration of Zn varied linearly with P_Zn up to a maximum value which was found to correspond to the solubility limit set by second phase formation, e.g., growth of Zn₃As₂. Although large differences were observed between …