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Full-Text Articles in Nanoscience and Nanotechnology
Incorporation Of Zn In Gaas During Organometallic Vapor Phase Epitaxy Growth Compared To Equilibrium, W. Reichert, C.Y. Chen, W.M. Li, Jeffrey E. Shield, R.M. Cohen, D.S. Simons, P.H. Chi
Incorporation Of Zn In Gaas During Organometallic Vapor Phase Epitaxy Growth Compared To Equilibrium, W. Reichert, C.Y. Chen, W.M. Li, Jeffrey E. Shield, R.M. Cohen, D.S. Simons, P.H. Chi
Nebraska Center for Materials and Nanoscience: Faculty Publications
The zinc concentration measured after organometallic vapor phase epitaxy (GMVPE) growth on (100)-oriented GaAs at 700 °C has been compared to the zinc concentration measured after in-diffusion under near-equilibrium conditions. During diffusion, the concentration of Zn 20 nm below the surface was found to vary with PZn1/2, as expected for bulk solid-vapor equilibrium. During growth, the concentration of Zn varied linearly with PZn up to a maximum value which was found to correspond to the solubility limit set by second phase formation, e.g., growth of Zn3As2. Although large differences were observed between …