Nanoscience and Nanotechnology Commons^™

In many device architectures based on 2D materials, a major part of the heat generated in hot-spots dissipates in the through-plane direction where the interfacial thermal resistances can significantly restrain the heat removal

capability of the device. Despite its importance, there is an enormous (1–2 orders of magnitude) disagreement in the literature on the interfacial thermal transport characteristics of MoS2 and other transition metal dichalcogenides (TMDs) (0.1–14 MW m−2 K−1). In this report, the thermal boundary conductance (TBC) across MoS2 and graphene monolayers with SiO2/Si and sapphire substrates is systematically investigated using a

custom-made electrical thermometry platform followed by 3D …

We study the impact of grain boundaries (GB) and misorientation angles between grains on electronic

transport in 2-dimensional materials. Here we have developed a numerical model based on the firstprinciples

electronic bandstructure calculations in conjunction with a method which computes electron

transmission coefficients from simultaneous conservation of energy and momentum at the interface to

essentially evaluate GB/interface resistance in a Landauer formalism. We find that the resistance across

graphene GBs vary over a wide range depending on misorientation angles and type of GBs, starting

from 53 Ω μm for low-mismatch angles in twin (symmetric) GBs to about 1020 Ω μm …