Mechanical Engineering Commons^™

Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe

Makara Journal of Technology

As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between …

Bi-Directional Variable Stiffness Magnetorheological Elastomer (Mre) Design, Sarah S. Trabia

College of Engineering: Graduate Celebration Programs

What is MRE?
•MRE is a semi-active silicon with embedded iron particles for variable stiffness changes under external magnetic flux

Research Objective
•Feasibility of using MRE as a haptic feedback device.
•Design a MRE device that can increase or decrease the stiffness.
•Design an effective way of providing a “pre-strain” to the base silicon material.

Computational Simulation
•COMSOL 4.3b Finite Element Analysis
•2D axisymmetric model
•Parametric sweep was run to find the amount of current needed to counteract the permanent magnet.