Open Access. Powered by Scholars. Published by Universities.®

Mechanical Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 2 of 2

Full-Text Articles in Mechanical Engineering

Quality Improvement In Drilling Silicon By Using Micro Laser Assisted Drilling, Barkin Bakir Jan 2017

Quality Improvement In Drilling Silicon By Using Micro Laser Assisted Drilling, Barkin Bakir

The Hilltop Review

The micro-laser assisted drilling (µ-LAD) of monocrystalline silicon (100), using a diamond cutting tool coupled with a laser, was tested in order to improve the cutting edge quality of a drilled samples. The laser beam is transmitted through an optically transparent diamond drill bit and focused precisely at the tool-workpiece interface, where the material is under high pressure induced by the diamond tool. The influence of the laser power on the quality and the inner surface finish of the drilled materials is investigated. Different laser powers were used to carry out the experiments. The experimental results indicated that the µ-LAD …


Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe Aug 2014

Observation Of Tunneling Effects In Lateral Nanowire Pn Junctions, Sri Purwiyanti, Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Djoko Hartanto, Michiharu Tabe

Makara Journal of Technology

As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between …