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Full-Text Articles in Mechanical Engineering
Characterization Of Intercalated Graphite Fibers For Microelectromechanical Systems (Mems) Applications, Bryan W. Winningham
Characterization Of Intercalated Graphite Fibers For Microelectromechanical Systems (Mems) Applications, Bryan W. Winningham
Theses and Dissertations
Research was accomplished to characterize the electrical and physical characteristic changes of the Thornel® P-100 carbon fiber and five variants when intercalated with 96% sulfuric acid and incorporated the use of Microelectromechanical Systems (MEMS) structures for testing purposes. The five fiber variants were oxidized in 1 M nitric acid at 0.5 A for 30 seconds, 1 and 2 minutes, the last two samples were detreated at 1150 °C for one hour prior to the nitric acid treatment. The fibers were mounted onto a MEMS die, placed into a chip carrier, sulfuric acid added, the chip carrier sealed and testing accomplished. …
Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada
Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada
Theses and Dissertations
Micro-Raman (µRaman) spectroscopy is an efficient, non-destructive technique widely used to determine the quality of semiconductor materials and microelectromechanical systems. This work characterizes the stress distribution in wurtzite gallium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. This wide bandgap semiconductor material is being considered by the Air Force Research Laboratory for the fabrication of shock-hardened MEMS accelerometers. µRaman spectroscopy is particularly useful for stress characterization because of its ability to measure the spectral shifts in Raman peaks in a material, and correlate those shifts to stress and strain. The spectral peak shift as a function of stress, …
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Theses and Dissertations
Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …